NTE2406 NTE

NTE2406 Silicon NPN Transistor General Purpose Amp, Surface Mount (Compl to NTE2407) Absolute Maximum Ratings: (T = +25C unless otherwise specified) A CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 75V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 40V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V EBO Continuous Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600mA C Total Device Dissipation (FR5 Board, Note 1), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 225mW D Derate above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8mW/C Thermal Resistance, JunctiontoAmbient (FR5 Board, Note 1), R . . . . . . . . . . . . . . 556C/W thJA Total Device Dissipation (Alumina Substrate, Note 2), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300mW D Derate above +25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4mW/C Thermal Resistance, JunctiontoAmbient (Alumina Substrate, Note 2), R . . . . . . . . 417C/W thJA Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Note 1. FR5 = 1.000 (25.4mm) x .750 (19.05mm) x .062 (1.57mm). Note 2. Alumina = .400 (10.2mm) x .300 (7.62mm) x .024 (.609mm), 99.5% alumina. Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorBase Breakdown Voltage V I = 10 A, I = 0 75 V (BR)CBO C E CollectorEmitter Breakdown Voltage V I = 10mA, I = 0 40 V (BR)CEO C B EmitterBase Breakdown Voltage V I = 10 A, I = 0 6 V (BR)EBO E C Collector Cutoff Current I V = 60V, I = 0 0.01 A CBO CB E V = 60V, I = 0, T = +125C 10 A CB E A I V = 60V, V = 3V 10 nA CEX CE EB(off) Emitter Cutoff Current I V = 3V, I = 0 10 nA EBO EB C Base Cutoff Current I V = 60V, V = 3V 20 nA BL CE EB(off)Electrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 3) DC Current Gain h V = 10V, I = 0.1mA 35 FE CE C V = 10V, I = 1mA 50 CE C V = 10V, I = 10mA 75 CE C V = 10V, I = 10mA, T = 55C 35 CE C A V = 1V, I = 150mA 50 CE C V = 10V, I = 150mA 100 300 CE C V = 10V, I = 500mA 40 CE C CollectorEmitter Saturation Voltage V I = 150mA, I = 15mA 0.3 V CE(sat) C B I = 500mA, I = 50mA 1.0 V C B BaseEmitter Saturation Voltage V I = 150mA, I = 15mA 0.6 1.2 V BE(sat) C B I = 500mA, I = 50mA 2.0 V C B SmallSignal Characteristics Current GainBandwidth Product f I = 20mA, V = 20V, f = 100MHz 300 MHz T C CB Output Capacitance C V = 10V, I = 0, f = 1MHz 8 pF obo CB E Input Capacitance C V = 0.5V, I = 0, f = 1MHz 25 pF ibo EB C Input Impedance h V = 10V, I = 1mA, f = 1kHz 2 8 k ie CE C V = 10V, I = 10mA, f = 1kHz 0.25 1.25 k CE C 4 Voltage Feedback Ratio h V = 10V, I = 1mA, f = 1kHz 8 x 10 re CE C 4 V = 10V, I = 10mA, f = 1kHz 4 x 10 CE C SmallSignal Current Gain h V = 10V, I = 1mA, f = 1kHz 50 300 fe CE C V = 10V, I = 10mA, f = 1kHz 75 375 CE C Output Admittance h V = 10V, I = 1mA, f = 1kHz 5 35 mhos oe CE C V = 10V, I = 10mA, f = 1kHz 25 200 mhos CE C CollectorBase Time Constant rbC V = 20V, I = 20mA, f = 31.8MHz 150 ps c CB E Noise Fiqure NF I = 100 A, V = 10V, 4 dB C CE R = 1k ,,f = 1kHz S Switching Characteristics Delay Time t V = 30V, I = 150mA, 10 ns d CC C V = 0.5V, I = 15mA BE(off) B1 Rise Time t 25 ns r Storage Time t 225 ns V = 30V, I = 150mA, s CC C I = I = 15mA B1 B2 Fall Time t 60 ns f Note 3. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.