NTE2411 Silicon PNP Transistor High Voltage Amp/Driver (Compl to NTE2410) Description: The NTE2411 is a silicon PNP transistor in an SOT23 type surface mount case designed for use in high voltage applications. Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 150V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 160V CBO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EBO Continuous Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA C Total Power Dissipation (T = +25C, FR5 Board, Note 1), P . . . . . . . . . . . . . . . . . . . . . . . 225mW A D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1.8mW/C Thermal Resistance, JunctiontoAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 556C/mW thJA Total Power Dissipation (T = +25C, Alumina Substrate, Note 2), P . . . . . . . . . . . . . . . . . 300mW A D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2.4mW/C Thermal Resistance, JunctiontoAmbient, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 417C/mW thJA Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 55 to +150C stg Note 1. FR5 = 1.0 x 0.75 x 0.62 in. Note 2. Alumina = 0.4 x 0.3 x 0.024 in. 99.5% alumina. Electrical Characteristics: (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Breakdown Voltage V I = 1mA, I = 0 150 V (BR)CEO C B CollectorBase Breakdown Voltage V I = 100 A, I = 0 160 V (BR)CBO C E EmitterBase Breakdown Voltage V I = 10 A, I = 0 5 V (BR)EBO E C Collector Cutoff Current I V = 100V, I = 0 50 nA CBO CB E V = 100V, I = 0, T = +100C 50 A CB E AElectrical Characteristics (Contd): (T = +25C unless otherwise specified) A Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics DC Current Gain h I = 1mA, V = 5V 50 FE C CE I = 10mA, V = 5V 60 240 C CE I = 50mA, V = 5V 50 C CE CollectorEmitter Saturation Voltage V I = 10mA, I = 1mA 1.0 V CE(sat) C B I = 50mA, I = 5mA 1.0 V C B BaseEmitter Saturation Voltage V I = 10mA, I = 1mA 1.0 V BE(sat) C B I = 50mA, I = 5mA 1.0 V C B SmallSignal Characteristics Current GainBandwidth Product f I = 10mA, V = 10V, f = 100MHz 100 300 MHz T C CE Output Capacitance C V = 10V, I = 0, f = 1MHz 6 pF obo CB E Small Signal Current gain h I = 1mA, V = 10V, f = 1kHz 40 200 fe C CE Noise Figure NF I = 200 A, V = 5V, R = 10 , 8 dB C CE S f = 10Hz to 15.7kHz .016 (0.48) C .098 (2.5) Max B E .037 (0.95) .074 (1.9) .118 (3.0) Max .051 (1.3) .043 (1.1) .007 (0.2)