NTE2408 Silicon NPN Transistor General Purpose Amp, Surface Mount (Compl to NTE2409) Description: The NTE2408 is a silicon NPN general purpose transistor in a SOT23 type surface mount package designed for use in driver stages of audio amplifiers in thick and thinfilm hybrid circuits. Absolute Maximum Ratings: CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V CBO CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V CES CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65V CEO EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V EBO Collector Current, I C Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 100mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA Peak Emitter Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA EM Peak Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mA BM Total Power Dissipation (T = +60C, Note 1), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 200mW A tot Junction Temperature, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Thermal Resistance, JunctiontoTab, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60K/W thJT Thermal Resistance, TabtoSoldering Points, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 280K/W thTS Thermal Resistance, Soldering PointstoAmbient (Note 1), R . . . . . . . . . . . . . . . . . . . . 90K/W thSA Note 1. Mounted on a ceramic substrate .314 (8mm) x .393 (10mm) x .027 (0.7mm). Electrical Characteristics: (T = +25C unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit Collector Cutoff Current I V = 30V, I = 0 15 nA CBO CB E V = 30V, I = 0, T = +150C 5 A CB E A BaseEmitter Voltage V V = 5V, I = 2mA, Note 2 580 660 700 mV BE CE C V = 5V, I = 10mA, Note 2 770 mV CE C CollectorEmitter Saturation Voltage V I = 10mA, I = 0.5mA, Note 3 90 250 mV CE(sat) C B I = 100mA, I = 5mA, Note 3 200 600 mV C B Note 2. V decreases by about 2mV/K with increasing temperature. BE Note 3. V decreases by about 1.7mV with increasing temperature. BE(sat)Electrical Characteristics (Contd): (T = +25C unless otherwise specified) J Parameter Symbol Test Conditions Min Typ Max Unit BaseEmitter Saturation Voltage V I = 10mA, I = 0.5mA, Note 3 700 mV BE(sat) C B I = 100mA, I = 5mA, Note 3 900 mV C B DC Current Gain h V = 5V, I = 10 A 150 200 FE CE C V = 5V, I = 2mA 290 450 CE C Transition Frequency f V = 5V, I = 10mA, f = 35MHz 300 MHz T CE C Collector Capacitance C V = 10V, I = I = 0, f = 1MHz 2.5 pF c CB E e SmallSignal Current Gain h V = 5V, I = 2mA 125 500 fe CE C Noise Figure NF V = 5V, I = 200 A, f = 1kHz, 2 10 dB CE C B = 200Hz Note 3. V decreases by about 1.7mV with increasing temperature. BE(sat) .016 (0.48) C .098 (2.5) Max B E .037 (0.95) .074 (1.9) .118 (3.0) Max .051 (1.3) .043 (1.1) .007 (0.2)