X-On Electronics has gained recognition as a prominent supplier of NTE241 Bipolar Transistors - BJT across the USA, India, Europe, Australia, and various other global locations. NTE241 Bipolar Transistors - BJT are a product manufactured by NTE. We provide cost-effective solutions for Bipolar Transistors - BJT, ensuring timely deliveries around the world.

NTE241 NTE

NTE241 electronic component of NTE
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See Product Specifications
Part No.NTE241
Manufacturer: NTE
Category: Bipolar Transistors - BJT
Description: Transistor: NPN; bipolar; 80V; 4A; 60W; TO220
Datasheet: NTE241 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.9662 ea
Line Total: USD 1.97 
Availability - 1
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
1
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 1.9662
25 : USD 1.7875
250 : USD 1.425
500 : USD 1.3375
1000 : USD 1.3
2500 : USD 1.25
5000 : USD 1.2175
7500 : USD 1.1987

20
Ship by Thu. 14 Nov to Wed. 20 Nov
MOQ : 1
Multiples : 1
1 : USD 1.75
3 : USD 1.582
10 : USD 1.4
14 : USD 1.288
25 : USD 1.26

   
Manufacturer
Product Category
Polarisation
Mounting
Case
Type Of Transistor
Collector-Emitter Voltage
Collector Current
Power Dissipation
Current Gain
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the NTE241 from our Bipolar Transistors - BJT category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the NTE241 and other electronic components in the Bipolar Transistors - BJT category and beyond.

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NTE241 (NPN) & NTE242 (PNP) Silicon Complementary Transistors Audio Power Amplifier, Switch Description: The NTE241 (NPN) and NTE242 (PNP) are silicon complementary transistors in a TO220 type package designed for use in power amplifier and switching circuits. Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V CB EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EB Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A C Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A B Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 320mW/C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.12C/W JC Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Sustaining Voltage V I = 100mA, I = 0, Note 1 80 V CEO(sus) C B Collector Cutoff Current I V = 80V, I = 0 1.0 mA CEO CE B I V = 80V, V = 1.5V 0.1 mA CEX CE EB(off) V = 80V, V = 1.5V, T = +125C 2.0 mA CE EB(off) C I V = 80V, I = 0 0.1 mA CBO CB E Emitter Cutoff Current I V = 5V, I = 0 1.0 mA EBO BE C Note 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.Electrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 1) DC Current Gain h I = 1.5A, V = 2V 20 80 FE C CE I = 4.0A, V = 2V 7 C CE CollectorEmitter Saturation Voltage V I = 1.5A, I = 150mA 0.6 V CE(sat) C B I = 4.0A, I = 1A 1.4 V C B BaseEmitter ON Voltage V I = 1.5A, V = 2V 1.2 V BE(on) C CE Dynamic Characteristics SmallSignal Current Gain h I = 100mA, V = 2V, f = 1kHz 25 fe C CE CurrentGain Bandwidth Product f I = 1A, V = 4V, f = 1MHz 2.5 MHz T C CE Note 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. .420 (10.67) Max .110 (2.79) .147 (3.75) .500 Dia Max (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base Emitter Collector/Tab .100 (2.54)

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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