NTE241 (NPN) & NTE242 (PNP) Silicon Complementary Transistors Audio Power Amplifier, Switch Description: The NTE241 (NPN) and NTE242 (PNP) are silicon complementary transistors in a TO220 type package designed for use in power amplifier and switching circuits. Absolute Maximum Ratings: CollectorEmitter Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V CEO CollectorBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80V CB EmitterBase Voltage, V . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5V EB Collector Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4A C Base Current, I . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1A B Total Power Dissipation (T = +25C), P . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 60W C D Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 320mW/C Operating Junction Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C J Storage Temperature Range, T . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 65 to +150C stg Thermal Resistance, JunctiontoCase, R . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3.12C/W JC Electrical Characteristics: (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit OFF Characteristics CollectorEmitter Sustaining Voltage V I = 100mA, I = 0, Note 1 80 V CEO(sus) C B Collector Cutoff Current I V = 80V, I = 0 1.0 mA CEO CE B I V = 80V, V = 1.5V 0.1 mA CEX CE EB(off) V = 80V, V = 1.5V, T = +125C 2.0 mA CE EB(off) C I V = 80V, I = 0 0.1 mA CBO CB E Emitter Cutoff Current I V = 5V, I = 0 1.0 mA EBO BE C Note 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%.Electrical Characteristics (Contd): (T = +25C unless otherwise specified) C Parameter Symbol Test Conditions Min Typ Max Unit ON Characteristics (Note 1) DC Current Gain h I = 1.5A, V = 2V 20 80 FE C CE I = 4.0A, V = 2V 7 C CE CollectorEmitter Saturation Voltage V I = 1.5A, I = 150mA 0.6 V CE(sat) C B I = 4.0A, I = 1A 1.4 V C B BaseEmitter ON Voltage V I = 1.5A, V = 2V 1.2 V BE(on) C CE Dynamic Characteristics SmallSignal Current Gain h I = 100mA, V = 2V, f = 1kHz 25 fe C CE CurrentGain Bandwidth Product f I = 1A, V = 4V, f = 1MHz 2.5 MHz T C CE Note 1. Pulse Test: Pulse Width 300 s, Duty Cycle 2%. .420 (10.67) Max .110 (2.79) .147 (3.75) .500 Dia Max (12.7) Max .250 (6.35) Max .500 (12.7) Min .070 (1.78) Max Base Emitter Collector/Tab .100 (2.54)