New Product SiB452DK Vishay Siliconix N-Channel 190-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free a V (V) R ()I (A) Q (Typ.) DS DS(on) D g TrenchFET Power MOSFET 2.4 at V = 4.5 V 1.5 GS New Thermally Enhanced PowerPAK RoHS 2.6 at V = 2.5 V 190 1.48 2.3 nC GS SC-75 Package COMPLIANT 6.0 at V = 1.8 V - Small Footprint Area 0.4 GS - Low On-Resistance APPLICATIONS Boost Converter for Portable Devices PowerPAK SC-75-6L-Single D 1 D 2 Marking Code D 3 A C X G Part code G D X X X 6 Lot Traceability S D 5 and Date code S 1.60 mm 1.60 mm 4 S Ordering Information: SiB452DK-T1-GE3 (Lead (Pb)-free and Halogen-free) N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit V Drain-Source Voltage 190 DS V Gate-Source Voltage V 16 GS T = 25 C 1.5 C T = 70 C 1.24 C Continuous Drain Current (T = 150 C) I J D b, c T = 25 C 0.67 A b, c T = 70 C A A 0.53 I Pulsed Drain Current 1.5 DM T = 25 C 1.5 C Continuous Source-Drain Diode Current I S b, c T = 25 C A 0.67 T = 25 C 13 C T = 70 C 8.4 C P Maximum Power Dissipation W D b, c T = 25 C A 2.4 b, c T = 70 C A 1.6 Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e Soldering Recommendations (Peak Temperature) 260 THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f t 5 s R 41 51 Maximum Junction-to-Ambient thJA C/W Steady State R 7.5 9.5 Maximum Junction-to-Case (Drain) thJC Notes: a. T = 25 C. C b. Surface Mounted on 1 x 1 FR4 board. c. t = 5 s. d. See Solder Profile (New Product SiB452DK Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = 250 A Drain-Source Breakdown Voltage 190 V DS GS D V Temperature Coefficient V /T 202 DS DS J I = 250 A mV/C D V Temperature Coefficient V /T - 3.2 GS(th) GS(th) J V V = V , I = 250 A Gate-Source Threshold Voltage 0.6 1.5 V GS(th) DS GS D I V = 0 V, V = 16 V Gate-Source Leakage 100 nA GSS DS GS V = 190 V, V = 0 V 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 190 V, V = 0 V, T = 55 C 10 DS GS J a I V 5 V, V = 4.5 V 1.5 A On-State Drain Current D(on) DS GS V = 4.5 V, I = 0.5 A 1.8 2.4 GS D a R V = 2.5 V, I = 0.45 A 1.9 2.6 Drain-Source On-State Resistance DS(on) GS D V = 1.8 V, I = 0.2 A 2.0 6.0 GS D a g V = 10 V, I = 0.5 A 3S Forward Transconductance fs DS D b Dynamic Input Capacitance C 135 iss C V = 50 V, V = 0 V, f = 1 MHz Output Capacitance 9 pF oss DS GS C Reverse Transfer Capacitance 6 rss V = 95 V, V = 10 V, I = 0.7 A 4.3 6.5 DS GS D Q Total Gate Charge g 2.3 3.5 nC Q Gate-Source Charge V = 95 V, V = 4.5 V, I = 0.7 A 0.4 gs DS GS D Q Gate-Drain Charge 1.0 gd R Gate Resistance f = 1 MHz 2.2 g Turn-On Delay Time t 12 20 d(on) t Rise Time V = 95 V, R = 190 16 25 r DD L I 0.5 A, V = 4.5 V, R = 1 Turn-Off Delay Time t 30 45 D GEN g d(off) t Fall Time 15 25 f ns Turn-On Delay Time t 510 d(on) t Rise Time V = 95 V, R = 190 10 15 r DD L I 0.5 A, V = 10 V, R = 1 Turn-Off Delay Time t 10 15 D GEN g d(off) t Fall Time 10 15 f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I T = 25 C 1.5 S C A I Pulse Diode Forward Current 1.5 SM V I = 0.5 A, V = 0 V Body Diode Voltage 0.8 1.2 V SD S GS t Body Diode Reverse Recovery Time 40 60 ns rr Q Body Diode Reverse Recovery Charge 45 70 nC rr I = 0.5 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 20 a ns t Reverse Recovery Rise Time 19 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 68832 2 S-81724-Rev. A, 04-Aug-08