New Product SiA975DJ Vishay Siliconix Dual P-Channel 12-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 V (V) R ()I (A) Q (Typ.) DS DS(on) D g Definition a 0.041 at V = - 4.5 V - 4.5 GS TrenchFET Power MOSFET a - 12 0.060 at V = - 2.5 V 10.5 nC New Thermally Enhanced PowerPAK GS - 4.5 SC-70 Package 0.110 at V = - 1.8 V GS - 3.5 - Small Footprint Area - Low On-Resistance 100 % R Tested g Compliant to RoHS directive 2002/95/EC APPLICATIONS PowerPAK SC-70-6 Dual Load Switch, PA Switch and Battery Switch for Portable Devices and Game Consoles S S 1 2 1 S 1 2 Marking Code G 1 3 D 1 G G 1 2 D J X D 2 Part code D 1 X X X D 2 6 Lot Traceability G 2 and Date Code 5 2.05 mm 2.05 mm S 2 4 D D 1 2 Ordering Information: SiA975DJ-T1-GE3 (Lead (Pb)-free and Halogen-free) P-Channel MOSFET P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T = 25 C, unless otherwise noted A Parameter Symbol LimitUnit Drain-Source Voltage V - 12 DS V Gate-Source Voltage V 8 GS a T = 25 C - 4.5 C a T = 70 C - 4.5 C Continuous Drain Current (T = 150 C) I J D a,b, c T = 25 C - 4.5 A b, c T = 70 C A - 4.4 A I - 15 Pulsed Drain Current DM a T = 25 C - 4.5 C I Continuous Source-Drain Diode Current S b, c T = 25 C - 1.6 A T = 25 C 7.8 C T = 70 C 5 C P Maximum Power Dissipation W D b, c T = 25 C 1.9 A b, c T = 70 C 1.2 A Operating Junction and Storage Temperature Range T , T - 55 to 150 J stg C d, e 260 Soldering Recommendations (Peak Temperature) THERMAL RESISTANCE RATINGS Parameter Symbol TypicalMaximumUnit b, f R t 5 s 52 65 Maximum Junction-to-Ambient thJA C/W R Maximum Junction-to-Case (Drain) Steady State 12.5 16 thJC Notes: a. Package limited. b. Surface Mounted on 1 x 1 FR4 board. c. t = 5 s. d. See Solder Profile (www.vishay.com/ppg 73257). The PowerPAK SC-70 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under Steady State conditions is 110 C/W. Document Number: 65710 www.vishay.com S10-0213-Rev. A, 25-Jan-10 1New Product SiA975DJ Vishay Siliconix SPECIFICATIONS T = 25 C, unless otherwise noted J Parameter Symbol Test Conditions Min.Typ.Max.Unit Static V V = 0 V, I = - 250 A Drain-Source Breakdown Voltage - 12 V DS GS D V Temperature Coefficient V /T - 3.6 DS DS J I = - 250 A mV/C D V Temperature Coefficient V /T 2.4 GS(th) GS(th) J V V = V , I = - 250 A Gate-Source Threshold Voltage - 0.4 - 1 V GS(th) DS GS D I V = 0 V, V = 8 V Gate-Source Leakage 100 nA GSS DS GS V = - 12 V, V = 0 V - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = - 12 V, V = 0 V, T = 55 C - 10 DS GS J a I V - 5 V, V = - 4.5 V - 10 A On-State Drain Current D(on) DS GS V = - 4.5 V, I = - 4.3 A 0.033 0.041 GS D a R V = - 2.5 V, I = - 3.6 A 0.049 0.060 Drain-Source On-State Resistance DS(on) GS D V = - 1.8 V, I = - 1.5 A 0.070 0.110 GS D a g V = - 6 V, I = - 4.6 A 12 S Forward Transconductance fs DS D b Dynamic Input Capacitance C 1500 iss C V = - 6 V, V = 0 V, f = 1 MHz Output Capacitance 260 pF oss DS GS C Reverse Transfer Capacitance 250 rss V = - 6 V, V = - 8 V, I = - 5.6 A 17 26 DS GS D Q Total Gate Charge g 10.5 16 nC Q Gate-Source Charge V = - 6 V, V = - 4.5 V, I = - 5.6 A 2.3 gs DS GS D Q Gate-Drain Charge 2.5 gd R Gate Resistance f = 1 MHz 1.1 5.5 11 g t Turn-On Delay Time 22 35 d(on) t Rise Time V = - 6 V, R = 1.3 22 35 r DD L I - 4.5 A, V = - 4.5 V, R = 1 Turn-Off Delay Time t 32 50 D GEN g d(off) t Fall Time 15 25 f ns Turn-On Delay Time t 10 15 d(on) t Rise Time V = - 6 V, R = 1.3 10 15 r DD L I - 4.5 A, V = - 8 V, R = 1 Turn-Off Delay Time t 30 40 D GEN g d(off) t Fall Time 12 20 f Drain-Source Body Diode Characteristics T = 25 C Continuous Source-Drain Diode Current I - 4.5 S C A I Pulse Diode Forward Current - 15 SM V I = - 4.5 A, V = 0 V Body Diode Voltage - 0.87 - 1.2 V SD S GS t Body Diode Reverse Recovery Time 30 60 ns rr Q Body Diode Reverse Recovery Charge 15 30 nC rr I = - 4.5 A, dI/dt = 100 A/s, T = 25 C F J t Reverse Recovery Fall Time 15 a ns t Reverse Recovery Rise Time 15 b Notes: a. Pulse test pulse width 300 s, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. www.vishay.com Document Number: 65710 2 S10-0213-Rev. A, 25-Jan-10