SiHB24N65E www.vishay.com Vishay Siliconix E Series Power MOSFET FEATURES PRODUCT SUMMARY Generation Two V (V) at T max. 700 DS J Low Figure-of-Merit (FOM) R x Q on g R max. at 25 C ()V = 10 V 0.145 DS(on) GS Low Input Capacitance (C ) iss Q max. (nC) 122 g Reduced Switching and Conduction Losses Q (nC) 21 gs Ultra Low Gate Charge (Q ) g Q (nC) 37 gd Avalanche Energy Rated (UIS) Configuration Single Compliant to RoHS Directive 2002/95/EC D APPLICATIONS Server and Telecom Power Supplies 2 D PAK (TO-263) Switch Mode Power Supplies (SMPS) G Power Factor Correction Power Supplies (PFC) Lighting - High-Intensity Discharge (HID) S - Fluorescent Ballast Lighting D G N-Channel MOSFET Industrial S - Welding - Induction Heating - Motor Drives - Battery Chargers - Renewable Energy - Solar (PV Inverters) ORDERING INFORMATION 2 Package D PAK (TO-263) Lead (Pb)-free SiHB24N65E-E3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-Source Voltage V 650 DS V Gate-Source Voltage 20 V GS Gate-Source Voltage AC (f > 1 Hz) 30 T = 25 C 24 C Continuous Drain Current (T = 150 C) V at 10 V I J GS D T = 100 C 16 A C a Pulsed Drain Current I 70 DM Linear Derating Factor 2W/C b Single Pulse Avalanche Energy E 508 mJ AS Maximum Power Dissipation P 250 W D Operating Junction and Storage Temperature Range T , T - 55 to + 150 C J stg Drain-Source Voltage Slope T = 125 C 37 J dV/dt V/ns d Reverse Diode dV/dt 11 c Soldering Recommendations (Peak Temperature) for 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature. b. V = 50 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 6 A. DD J g AS c. 1.6 mm from case. d. I I , dI/dt = 100 A/s, starting T = 25 C. SD D J S11-1822-Rev. A, 19-Sep-11 Document Number: 91477 1 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SiHB24N65E www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP. MAX. UNIT Maximum Junction-to-Ambient R -62 thJA C/W Maximum Junction-to-Case (Drain) -0.5 R thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOLTEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-Source Breakdown Voltage V V = 0 V, I = 250 A 650 - - V DS GS D V /T -0.72 - V Temperature Coefficient Reference to 25 C, I = 250 A V/C DS DS J D Gate-Source Threshold Voltage (N) V V = V , I = 250 A 2 - 4 V GS(th) DS GS D Gate-Source Leakage I V = 20 V - - 100 nA GSS GS V = 650 V, V = 0 V - - 1 DS GS Zero Gate Voltage Drain Current I A DSS V = 520 V, V = 0 V, T = 125 C - - 10 DS GS J Drain-Source On-State Resistance R V = 10 V I = 12 A - 0.120 0.145 DS(on) GS D Forward Transconductance g V = 8 V, I = 5 A - 7.1 - S fs DS D Dynamic Input Capacitance C - 2740 - iss V = 0 V, GS Output Capacitance C -V = 100 V, 122- pF oss DS f = 1 MHz Reverse Transfer Capacitance C -4- rss Total Gate Charge Q - 81 122 g Gate-Source Charge Q -2V = 10 V I = 24 A, V = 520 V1- nC gs GS D DS Gate-Drain Charge Q -37- gd Turn-On Delay Time t -24 48 d(on) Rise Time t - 84 126 r V = 520 V, I = 24 A, DD D ns Turn-Off Delay Time t -V = 10 V, R = 9.1 70105 d(off) GS g Fall Time t -69104 f Gate Input Resistance R f = 1 MHz, open drain - 0.68 - g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous Source-Drain Diode Current I -- 24 S showing the A G integral reverse Pulsed Diode Forward Current I -- 96 S SM p - n junction diode Diode Forward Voltage V T = 25 C, I = 24 A, V = 0 V - - 1.2 V SD J S GS Reverse Recovery Time t - 517 - ns rr T = 25 C, I = I = 24 A, J F S Reverse Recovery Charge Q -9.7 - C rr dI/dt = 100 A/s, V = 20 V R Reverse Recovery Current I -30 - A RRM The information shown here is a preliminary product proposal, not a commercial product datasheet. Vishay Siliconix is not committed to produce this or any similar product. This information should not be used for design purposes, nor construed as an offer to furnish or sell such products. S11-1822-Rev. A, 19-Sep-11 Document Number: 91477 2 THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000