X-On Electronics has gained recognition as a prominent supplier of SIHB28N60EF-GE3 MOSFETs across the USA, India, Europe, Australia, and various other global locations. SIHB28N60EF-GE3 MOSFETs are a product manufactured by Vishay. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

SIHB28N60EF-GE3 Vishay

SIHB28N60EF-GE3 electronic component of Vishay
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Part No.SIHB28N60EF-GE3
Manufacturer: Vishay
Category: MOSFETs
Description: Vishay Semiconductors MOSFET 600V 123mOhms10V 28A N-Ch MOSFET
Datasheet: SIHB28N60EF-GE3 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 5.7385 ea
Line Total: USD 5.74 
Availability - 921
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
921
Ship by Thu. 21 Nov to Mon. 25 Nov
MOQ : 1
Multiples : 1
1 : USD 5.7385
10 : USD 4.991
25 : USD 3.4155
1000 : USD 3.174
2000 : USD 3.1625

   
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RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
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Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
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We are delighted to provide the SIHB28N60EF-GE3 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the SIHB28N60EF-GE3 and other electronic components in the MOSFETs category and beyond.

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SiHB28N60EF www.vishay.com Vishay Siliconix EF Series Power MOSFET with Fast Body Diode FEATURES D Fast body diode MOSFET using E series technology 2 D PAK (TO-263) Reduced t , Q , and I rr rr RRM Low figure-of-merit (FOM): R x Q on g G Low input capacitance (C ) iss Low switching losses due to reduced Q rr Ultra low gate charge (Q ) g D Avalanche energy rated (UIS) G S Material categorization: for definitions of compliance S please see www.vishay.com/doc 99912 N-Channel MOSFET APPLICATIONS Telecommunications PRODUCT SUMMARY - Server and telecom power supplies V (V) 650 DS Lighting R max. () at V = 10 V 0.123 DS(on) GS - High intensity discharge (HID) Q typ. (nC) 33 - Light emitting diodes (LEDs) g Consumer and computing I (A) 28 D - ATX power supplies Configuration Single Industrial - Welding - Battery chargers Renewable energy - Solar (PV inverters) Switch mode power suppliers (SMPS) Applications using the following topologies - LLC - Phase shifted bridge (ZVS) - 3-level inverter - AC/DC bridge ORDERING INFORMATION Package D2PAK (TO-263) SIHB28N60EF-GE3 Lead (Pb)-free and Halogen-free SIHB28N60EF-T1-GE3 SIHB28N60EF-T5-GE3 ABSOLUTE MAXIMUM RATINGS (T = 25 C, unless otherwise noted) C PARAMETER SYMBOLLIMITUNIT Drain-source voltage V 600 DS V Gate-source voltage V 30 GS T = 25 C 28 C Continuous drain current (T = 150 C) V at 10 V I J GS D T = 100 C 18 A C a Pulsed drain current I 75 DM Linear derating factor 2W/C b Single pulse avalanche energy E 691 mJ AS Maximum power dissipation P 250 W D Operating junction and storage temperature range T , T -55 to +150 C J stg Drain-source voltage slope T = 125 C 70 J dV/dt V/ns d Reverse diode dV/dt 50 c Soldering recommendations (peak temperature) for 10 s 300 C Notes a. Repetitive rating pulse width limited by maximum junction temperature b. V = 50 V, starting T = 25 C, L = 28.2 mH, R = 25 , I = 7 A DD J g AS c. 1.6 mm from case d. I I , dI/dt = 900 A/s, starting T = 25 C SD D J S21-0115-Rev. D, 15-Feb-2021 Document Number: 91601 1 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000 SiHB28N60EF www.vishay.com Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOLTYP.MAX.UNIT Maximum junction-to-ambient R -62 thJA C/W Maximum junction-to-case (drain) R -0.5 thJC SPECIFICATIONS (T = 25 C, unless otherwise noted) J PARAMETER SYMBOL TEST CONDITIONS MIN.TYP.MAX.UNIT Static Drain-source breakdown voltage V V = 0 V, I = 250 A 600 - - V DS GS D V temperature coefficient V /T Reference to 25 C, I = 1 mA - 0.76 - V/C DS DS J D Gate-source threshold voltage (N) V V = V , I = 250 A 2.0 - 4.0 V GS(th) DS GS D V = 20 V - - 100 nA GS Gate-source leakage I GSS V = 30 V - - 1 A GS V = 480 V, V = 0 V - - 1 A DS GS Zero gate voltage drain current I DSS V = 480 V, V = 0 V, T = 125 C - - 2 mA DS GS J Drain-source on-state resistance R V = 10 V I = 14 A - 0.107 0.123 DS(on) GS D Forward transconductance g V = 30 V, I = 14 A - 9.7 - S fs DS D Dynamic Input capacitance C - 2714 - V = 0 V, iss GS Output capacitance C -V = 100 V, 123- oss DS Reverse transfer capacitance C -6f = 1 MHz - rss pF Effective output capacitance, energy C -98 - o(er) a related V = 0 V, V = 0 V to 480 V GS DS Effective output capacitance, time C - 356 - b o(tr) related Total gate charge Q - 80 120 g Gate-source charge Q -1V = 10 V I = 14 A, V = 480 V 7- nC gs GS D DS Gate-drain charge Q -33- gd Turn-on delay time t -24 48 d(on) Rise time t -40 80 r V = 480 V, I = 14 A DD D ns R = 9.1 , V = 10 V Turn-off delay time t -g GS 82123 d(off) Fall time t -3978 f Gate input resistance R f = 1 MHz, open drain 0.2 0.5 1.0 g Drain-Source Body Diode Characteristics MOSFET symbol D Continuous source-drain diode current I -- 28 S showing the A G integral reverse Pulsed diode forward current I S -- 70 SM p - n junction diode Diode forward voltage V T = 25 C, I = 11 A, V = 0 V - 0.9 1.2 V SD J S GS Reverse recovery time t - 142 284 ns rr T = 25 C, I = I = 14 A, J F S Reverse recovery charge Q - 0.97 1.94 C rr dI/dt = 100 A/s, V = 400 V R Reverse recovery current I - 13.2 - A RRM Notes a. C is a fixed capacitance that gives the same energy as C while V is rising from 0 % to 80 % V oss(er) oss DS DS b. C is a fixed capacitance that gives the charging time as C while V is rising from 0 % to 80 % V oss(tr) oss DS DS S21-0115-Rev. D, 15-Feb-2021 Document Number: 91601 2 For technical questions, contact: hvm vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc 91000

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8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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