X-On Electronics has gained recognition as a prominent supplier of PSMN1R1-25YLC,115 MOSFET across the USA, India, Europe, Australia, and various other global locations. PSMN1R1-25YLC,115 MOSFET are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

PSMN1R1-25YLC,115 Nexperia

PSMN1R1-25YLC,115 electronic component of Nexperia
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See Product Specifications
Part No.PSMN1R1-25YLC,115
Manufacturer: Nexperia
Category: MOSFET
Description: N-Channel 25 V 100A (Tc) 215W (Tc) Surface Mount LFPAK56, Power-SO8
Datasheet: PSMN1R1-25YLC,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

141: USD 0.7511 ea
Line Total: USD 105.91

Availability - 1455
Ship by Fri. 09 Aug to Thu. 15 Aug
MOQ: 141  Multiples: 1
Pack Size: 1
Availability Price Quantity
1455
Ship by Fri. 09 Aug to Thu. 15 Aug
MOQ : 141
Multiples : 1
141 : USD 0.7511
250 : USD 0.6777
500 : USD 0.6478
1000 : USD 0.5716

1750
Ship by Thu. 15 Aug to Mon. 19 Aug
MOQ : 1
Multiples : 1
1 : USD 1.311
10 : USD 1.0913
100 : USD 0.8694
500 : USD 0.7578
1000 : USD 0.6497
1500 : USD 0.6371
3000 : USD 0.6015
9000 : USD 0.6003

1455
Ship by Fri. 09 Aug to Thu. 15 Aug
MOQ : 141
Multiples : 1
141 : USD 0.6846
250 : USD 0.6777
500 : USD 0.6478
1000 : USD 0.5716

93120
Ship by Fri. 09 Aug to Thu. 15 Aug
MOQ : 1500
Multiples : 1500
1500 : USD 0.9004
3000 : USD 0.8543
7500 : USD 0.8316
9000 : USD 0.7514
10500 : USD 0.7502

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Brand
Factory Pack Quantity :
Configuration
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the PSMN1R1-25YLC,115 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN1R1-25YLC,115 and other electronic components in the MOSFET category and beyond.

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PSMN1R1-25YLC N-channel 25 V 1.15 m logic level MOSFET in LFPAK using NextPower technology Rev. 1 2 May 2011 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High reliability Power SO8 package, Ultra low QG, QGD and QOSS for high qualified to 175C system efficiencies at low and high loads Optimised for 4.5V Gate drive utilising NextPower Superjunction technology Ultra low Rdson and low parasitic inductance 1.3 Applications DC-to-DC converters Power OR-ing Lithium-ion battery protection Server power supplies Load switching Sync rectifier 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 25 V DS j 1 I drain current T =25C V =10V - - 100 A D mb GS see Figure 1 P total power dissipation T =25C see Figure 2 - - 215 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V =4.5 V I =25A -1.2 1.5 m DSon GS D resistance T =25C j see Figure 12 V =10V I =25A - 0.95 1.15 m GS D T =25C j see Figure 12PSMN1R1-25YLC Nexperia N-channel 25 V 1.15 m logic level MOSFET in LFPAK using Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics Q gate-drain charge V =4.5 V I =25A -11 -nC GD GS D V =12V see Figure 14 DS see Figure 15 Q total gate charge V =4.5 V I =25A -39 -nC G(tot) GS D V =12V see Figure 15 DS see Figure 14 1 Continuous current is limited by package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mbb076 S mb D mounting base 1234 connected to drain SOT669 (LFPAK Power-SO8) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN1R1-25YLC LFPAK plastic single-ended surface-mounted package 4 leads SOT669 Power-SO8 4. Marking Table 4. Marking codes 1 Type number Marking code PSMN1R1-25YLC 1C125L 1 % = placeholder for manufacturing site code. PSMN1R1-25YLC All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 2 May 2011 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.

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