X-On Electronics has gained recognition as a prominent supplier of PSMN017-60YS,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN017-60YS,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PSMN017-60YS,115 Nexperia

PSMN017-60YS,115 electronic component of Nexperia
PSMN017-60YS,115 Nexperia
PSMN017-60YS,115 MOSFETs
PSMN017-60YS,115  Semiconductors

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See Product Specifications
Part No. PSMN017-60YS,115
Manufacturer: Nexperia
Category: MOSFETs
Description: NXP Semiconductors MOSFET Single N-Channel 60V 174A 74W 24.7mOhms
Datasheet: PSMN017-60YS,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.9187 ea
Line Total: USD 0.92 
Availability - 7585
Ship by Wed. 16 Apr to Fri. 18 Apr
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
106
Ship by Fri. 25 Apr to Wed. 30 Apr
MOQ : 1
Multiples : 1
1 : USD 1.3859
10 : USD 1.1204
30 : USD 0.8443
100 : USD 0.6574
500 : USD 0.5674
1500 : USD 0.5366

7585
Ship by Wed. 16 Apr to Fri. 18 Apr
MOQ : 1
Multiples : 1
1 : USD 0.9187
10 : USD 0.73
100 : USD 0.374
250 : USD 0.374
500 : USD 0.363
1000 : USD 0.3113
1500 : USD 0.297
3000 : USD 0.297

1642
Ship by Fri. 18 Apr to Thu. 24 Apr
MOQ : 326
Multiples : 1
326 : USD 0.3856

1455
Ship by Fri. 18 Apr to Thu. 24 Apr
MOQ : 1500
Multiples : 1500
1500 : USD 0.2985

12319
Ship by Fri. 18 Apr to Thu. 24 Apr
MOQ : 1362
Multiples : 1
1362 : USD 0.3329

2910
Ship by Fri. 18 Apr to Thu. 24 Apr
MOQ : 1500
Multiples : 1500
1500 : USD 0.3144
3000 : USD 0.3117

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Configuration
Brand
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PSMN017-60YS,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN017-60YS,115 and other electronic components in the MOSFETs category and beyond.

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PSMN017-60YS N-channel LFPAK 60 V 15.7 m standard level MOSFET Rev. 02 1 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provides low Improved mechanical and thermal RDSon and low gate charge characteristics High efficiency gains in switching LFPAK provides maximum power power converters density in a Power SO8 package 1.3 Applications DC-to-DC converters Motor control Lithium-ion battery protection Server power supplies Load switching 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 60 V DS j j I drain current T =25C V =10V --44 A D mb GS see Figure 1 P total power T = 25 C see Figure 2 --74 W tot mb dissipation T junction temperature -55 - 175 C j Avalanche ruggedness E non-repetitive V =10V T =25C --45 mJ DS(AL)S GS j(init) drain-source I =45 A V 60 V D sup avalanche energy R =50 unclamped GS Dynamic characteristics Q gate-drain charge V =10V I =30A -4.4 -nC GD GS D V = 30 V see Figure 14 DS Q total gate charge - 20 - nC G(tot) and 15PSMN017-60YS Nexperia N-channel LFPAK 60 V 15.7 m standard level MOSFET Table 1. Quick reference continued Symbol Parameter Conditions Min Typ Max Unit Static characteristics R drain-source V =10V I =15A --25 m DSon GS D on-state resistance T = 100 C see Figure 12 j V =10V I =15A - 12.3 15.7 m GS D T = 25 C see Figure 13 j 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4G gate mbb076 S mb D mounting base connected to 1234 drain SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN017-60YS LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 PSMN017-60YS 2 All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 02 1 April 2010 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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