PSMN011-60MLX Nexperia

PSMN011-60ML N-channel 60 V 11.3 m logic level MOSFET in LFPAK33 4 June 2013 Product data sheet 1. General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and conduction losses Suitable for standard level gate drive sources LFPAK33 package is footprint compatible with other 3.3mm types Qualified to 175 C 3. Applications AC-to-DC converters Synchronous rectification DC-DC converters 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 60 V DS j I drain current T = 25 C V = 10 V Fig. 1 - - 61 A D mb GS P total power dissipation T = 25 C Fig. 2 - - 91 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V = 10 V I = 15 A T = 25 C - 9.35 11.3 m DSon GS D j resistance Fig. 12 V = 4.5 V I = 15 A T = 25 C - 11 13.1 m GS D j Fig. 12 Dynamic characteristics Q gate-drain charge V = 4.5 V I = 15 A V = 30 V - 5.1 - nC GD GS D DS T = 25 C Fig. 14 Fig. 15 jNexperia PSMN011-60ML N-channel 60 V 11.3 m logic level MOSFET in LFPAK33 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source D 2 S source G 3 S source mbb076 S 4 G gate mb D mounting base connected to 1 2 3 4 drain LFPAK33 (SOT1210) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN011-60ML LFPAK33 Plastic single ended surface mounted package (LFPAK33) 4 SOT1210 leads 7. Marking Table 4. Marking codes Type number Marking code PSMN011-60ML M11L60 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T = 25 C - 60 V DS j V gate-source voltage -20 20 V GS I drain current V = 10 V T = 25 C Fig. 1 - 61 A D GS mb V = 10 V T = 100 C Fig. 1 - 43 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 4 - 242 A DM p mb P total power dissipation T = 25 C Fig. 2 - 91 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j PSMN011-60ML All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 4 June 2013 2 / 13