X-On Electronics has gained recognition as a prominent supplier of PSMN8R2-80YS,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN8R2-80YS,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PSMN8R2-80YS,115 Nexperia

PSMN8R2-80YS,115 electronic component of Nexperia
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Part No.PSMN8R2-80YS,115
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET N-CH 80V 8.5 mOhm Standard MOSFET
Datasheet: PSMN8R2-80YS,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.232 ea
Line Total: USD 1.23 
Availability - 19323
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
2000
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 168
Multiples : 1
168 : USD 0.7755
250 : USD 0.7692
500 : USD 0.7466
1000 : USD 0.7239

19323
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.232
10 : USD 0.9075
100 : USD 0.7227
500 : USD 0.6545
1000 : USD 0.6237
1500 : USD 0.6215
3000 : USD 0.605

1169
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.862
5 : USD 1.694
13 : USD 1.3132
36 : USD 1.2432
100 : USD 1.2418

2000
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 168
Multiples : 1
168 : USD 0.8939

1455
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 1500
Multiples : 1500
1500 : USD 0.7052
3000 : USD 0.6848
9000 : USD 0.6827

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Configuration
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the PSMN8R2-80YS,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN8R2-80YS,115 and other electronic components in the MOSFETs category and beyond.

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PSMN8R2-80YS N-channel LFPAK 80 V 8.5 m standard level MOSFET Rev. 01 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provides low Improved mechanical and thermal RDSon and low gate charge characteristics High efficiency gains in switching LFPAK provides maximum power power converters density in a Power SO8 package 1.3 Applications DC-to-DC converters Motor control Lithium-ion battery protection Server power supplies Load switching 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 80 V DS j j I drain current T =25C V =10V --82 A D mb GS see Figure 1 P total power T = 25 C see Figure 2 - - 130 W tot mb dissipation T junction temperature -55 - 175 C j Avalanche ruggedness E non-repetitive V =10V T =25C - - 120 mJ DS(AL)S GS j(init) drain-source I =75 A V 80 V D sup avalanche energy R =50 unclamped GS Dynamic characteristics Q gate-drain charge V =10V I =25A -12 -nC GD GS D V = 40 V see Figure 14 DS Q total gate charge - 55 - nC G(tot) see Figure 15Nexperia PSMN8R2-80YS N-channel LFPAK 80 V 8.5 m standard level MOSFET Table 1. Quick reference continued Symbol Parameter Conditions Min Typ Max Unit Static characteristics R drain-source V =10V I =15A - - 13.4 m DSon GS D on-state resistance T = 100 C see Figure 12 j V =10V I =15A -5.8 8.5 m GS D T = 25 C see Figure 13 j see Figure 12 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4G gate mbb076 S mb D mounting base connected to 1234 drain SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN8R2-80YS LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 Nexperia B.V. 2017. All rights reserved PSMN8R2-80YS 1 Product data sheet Rev. 01 25 June 2009 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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