X-On Electronics has gained recognition as a prominent supplier of PSMN8R5-60YS MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN8R5-60YS MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PSMN8R5-60YS Nexperia

PSMN8R5-60YS electronic component of Nexperia
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Part No.PSMN8R5-60YS
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET, N CH, 60V, 76A, SOT669
Datasheet: PSMN8R5-60YS Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
100: USD 0.8038 ea
Line Total: USD 80.38 
Availability - 0
MOQ: 100  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 100
Multiples : 1
100 : USD 0.8038
500 : USD 0.7009
1000 : USD 0.6326
5000 : USD 0.5829

   
Manufacturer
Product Category
Transistor Polarity
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Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
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No. Of Pins
Operating Temperature Max
Msl
Svhc
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We are delighted to provide the PSMN8R5-60YS from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN8R5-60YS and other electronic components in the MOSFETs category and beyond.

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NextPower MOSFETs Smaller, Faster, CoolerNextPower 25 V & 30 V MOSFETs in LFPAK (Power-SO8) NXP introduces a range of high performance N-channel, logic-level MOSFETs in LFPAK As a power design engineer, compromise is never far from your mind. Do I choose a low R device and accept the DS(on) higher output capacitance? Do I demand the lowest gate charge characteristics to reduce switching losses but then find that the package options are no longer ideal in my application? The NextPower range of MOSFETs from NXP provides uniquely balanced characteristics across the six most important parameters essential for your latest high efficiency and high reliability designs. More performance, less compromise Many competitors focus only on optimising R and Q . As Q gets lower then losses due to Q and Q become DS(on) g g oss gd more significant. NextPower uses Superjunction technology to provide the optimum balance between low R , low DS(on) Q , low Q and Q to give optimum switching performance. NextPower delivers superior SOA performance, and oss g(tot) gd low Q reduces the losses between the output DRAIN & SOURCE terminals. NextPower also delivers the lowest R oss DS(on) with sub 1 m types at both 25 V and 30 V. LFPAK packaging provides rugged power switching on a compact 5 mm x 6 mm footprint compatible with other Power-SO8 vendors. The unique benefits of LFPAK make it the best package choice for demanding applications or where high-reliability is required. It also allows for visual inspection, reducing the need for costly X-ray equipment to detect solder defects as is common with QFN style Power-SO8 packages. Key benefits } Optimum switching performance under light & heavy } High efficiency in power switching applications load conditions } Industrys lowest R Power-SO8 - Less than 1 m } L FPAK package for compatibility with other vendor DS(on) at 25 V and 30 V Power-SO8 types } Low Q for reduced output losses between DRAIN & } E liminates costly X-ray inspection LFPAK solder joints oss SOURCE can be optically inspected } Low Q for reduced switching losses and high frequency gd switching Key applications } 20 V rated GATE provides better tolerance to voltage } Synchronous buck regulators transients than lateral MOSFET types } DC-DC conversion } Superior Safe Operating Area performance compared } Voltage regulator modules (VRM) to other Trench MOSFET vendors } Power OR-ing } Optimised for 4.5 V gate drive voltage 2 NextPower MOSFETs - Visit us at www.nxp.com/mosfets

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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