X-On Electronics has gained recognition as a prominent supplier of PSMN8R5-60YS,115 MOSFET across the USA, India, Europe, Australia, and various other global locations. PSMN8R5-60YS,115 MOSFET are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFET, ensuring timely deliveries around the world.

PSMN8R5-60YS,115 Nexperia

PSMN8R5-60YS,115 electronic component of Nexperia
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Part No.PSMN8R5-60YS,115
Manufacturer: Nexperia
Category: MOSFET
Description: N-Channel 60 V 76A (Tc) 106W (Tc) Surface Mount LFPAK56, Power-SO8
Datasheet: PSMN8R5-60YS,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)

1500: USD 0.4807 ea
Line Total: USD 721.05

Availability - 14550
Ship by Tue. 30 Jul to Mon. 05 Aug
MOQ: 1500  Multiples: 1500
Pack Size: 1500
Availability Price Quantity
176
Ship by Tue. 30 Jul to Mon. 05 Aug
MOQ : 182
Multiples : 1
182 : USD 0.5379

14550
Ship by Tue. 30 Jul to Mon. 05 Aug
MOQ : 1500
Multiples : 1500
1500 : USD 0.4807
3000 : USD 0.4684
24000 : USD 0.4667

1
Ship by Tue. 06 Aug to Fri. 09 Aug
MOQ : 1
Multiples : 1
1 : USD 1.4327
10 : USD 1.4028
30 : USD 1.3823
100 : USD 1.3634

4736
Ship by Mon. 05 Aug to Wed. 07 Aug
MOQ : 1
Multiples : 1
1 : USD 0.9039
10 : USD 0.7935
100 : USD 0.6497
500 : USD 0.6003
1000 : USD 0.6003
1500 : USD 0.5279
3000 : USD 0.5129
24000 : USD 0.506

1433
Ship by Tue. 30 Jul to Mon. 05 Aug
MOQ : 1
Multiples : 1
1 : USD 1.43
5 : USD 1.287
16 : USD 1.0322
44 : USD 0.9763
500 : USD 0.962

14550
Ship by Tue. 30 Jul to Mon. 05 Aug
MOQ : 1500
Multiples : 1500
1500 : USD 0.4807
3000 : USD 0.4684
24000 : USD 0.4667

176
Ship by Tue. 30 Jul to Mon. 05 Aug
MOQ : 182
Multiples : 1
182 : USD 0.5379

   
Manufacturer
Product Category
RoHS - XON
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We are delighted to provide the PSMN8R5-60YS,115 from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN8R5-60YS,115 and other electronic components in the MOSFET category and beyond.

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PSMN8R5-60YS N-channel LFPAK 60 V, 8 m standard level MOSFET 22 July 2015 Product data sheet 1. General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits Advanced TrenchMOS provides low RDSon and low gate charge High efficiency gains in switching power converters Improved mechanical and thermal characteristics LFPAK provides maximum power density in a Power SO8 package 3. Applications DC-to-DC converters Lithium-ion battery protection Load switching Motor control Server power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 60 V DS j j I drain current T = 25 C V = 10 V Fig. 2 - - 76 A D mb GS P total power dissipation T = 25 C Fig. 1 - - 106 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V = 10 V I = 15 A T = 100 C - - 12.8 m DSon GS D j resistance Fig. 12 V = 10 V I = 15 A T = 25 C - 5.6 8 m GS D j Fig. 13 Dynamic characteristics Q gate-drain charge V = 10 V I = 60 A V = 30 V - 7.7 - nC GD GS D DS Fig. 15 Fig. 14Nexperia PSMN8R5-60YS N-channel LFPAK 60 V, 8 m standard level MOSFET Symbol Parameter Conditions Min Typ Max Unit Q total gate charge V = 10 V I = 60 A V = 30 V - 39 - nC G(tot) GS D DS Fig. 14 Fig. 15 Avalanche ruggedness E non-repetitive drain- V = 10 V T = 25 C I = 76 A - - 97 mJ DS(AL)S GS j(init) D source avalanche V 60 V R = 50 unclamped sup GS energy 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source G 3 S source mbb076 S 4 G gate 1 2 3 4 mb D mounting base connected to LFPAK56 Power- drain SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN8R5-60YS LFPAK56 Plastic single-ended surface-mounted package SOT669 Power-SO8 (LFPAK56 Power-SO8) 4 leads 7. Marking Table 4. Marking codes Type number Marking code PSMN8R5-60YS 8R560 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 60 V DS j j V drain-gate voltage T 25 C T 175 C R = 20 k - 60 V DGR j j GS PSMN8R5-60YS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 22 July 2015 2 / 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.

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