X-On Electronics has gained recognition as a prominent supplier of PSMN8R5-108ES mosfet across the USA, India, Europe, Australia, and various other global locations. PSMN8R5-108ES mosfet are a product manufactured by NXP. We provide cost-effective solutions for mosfet, ensuring timely deliveries around the world.

PSMN8R5-108ES NXP

PSMN8R5-108ES electronic component of NXP
Images are for reference only
See Product Specifications
Part No.PSMN8R5-108ES
Manufacturer: NXP
Category:MOSFET
Description: MOSFET N-Channel 100V 8.5mohm Fet
Datasheet: PSMN8R5-108ES Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0 - WHS 1

MOQ : 5000
Multiples : 5000
5000 : USD 1.4176
10000 : USD 1.3678
25000 : USD 1.3181
N/A

Obsolete
     
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Typical Turn-Off Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the PSMN8R5-108ES from our MOSFET category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN8R5-108ES and other electronic components in the MOSFET category and beyond.

Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain NXP or Philips Semiconductors references, use the references to Nexperia, as shown below. Instead of PSMN8R5-108ES N-channel 108 V 8.5 m standard level MOSFET in I2PAK 13 January 2014 Product data sheet 1. General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits High efficiency due to low switching and conduction losses Robust construction for demanding applications Standard level gate 3. Applications AC-to-DC power supply equipment Motor control Server power supplies Synchronous rectification 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C; T 175 C - - 108 V DS j j I drain current T = 25 C; V = 10 V; Fig. 1 [1] - - 100 A D j GS P total power dissipation T = 25 C; Fig. 2 - - 263 W tot mb Static characteristics R drain-source on-state V = 10 V; I = 25 A; T = 25 C; 4.5 6.4 8.5 m DSon GS D j resistance Fig. 13; Fig. 12 Dynamic characteristics Q gate-drain charge V = 10 V; I = 25 A; V = 50 V; - 33 - nC GD GS D DS Fig. 14; Fig. 15 Q total gate charge - 111 - nC G(tot) Avalanche Ruggedness E non-repetitive drain- V = 10 V; T = 25 C; I = 100 A; - - 219 mJ DS(AL)S GS j(init) D source avalanche V 100 V; R = 50 ; unclamped; sup GS energy Fig. 3 Scan or click this QR code to view the latest information for this product I2P AK

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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