PSMN8R5-100ESQ Nexperia

PSMN8R5-100ES N-channel 100 V 8.5 m standard level MOSFET in I2PAK 11 October 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching and conduction losses Suitable for standard level gate drive sources 1.3 Applications AC-to-DC power supply equipment Motor control Server power supplies Synchronous rectification 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current T = 25 C V = 10 V Fig. 1 1 - - 100 A D j GS P total power dissipation T = 25 C Fig. 2 - - 263 W tot mb Static characteristics R drain-source on-state V = 10 V I = 25 A T = 25 C - 6.4 8.5 m DSon GS D j resistance Fig. 13 Fig. 12 Dynamic characteristics Q gate-drain charge V = 10 V I = 25 A V = 50 V - 33 - nC GD GS D DS Fig. 14 Fig. 15 Q total gate charge - 111 - nC G(tot) Avalanche Ruggedness E non-repetitive drain- V = 10 V T = 25 C I = 100 A - - 219 mJ DS(AL)S GS j(init) D source avalanche V 100 V R = 50 unclamped sup GS energy Fig. 3 1 Continious current limited by package.Nexperia PSMN8R5-100ES N-channel 100 V 8.5 m standard level MOSFET in I2PAK 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain G 3 S source mbb076 S mb D mounting base connected to drain 1 2 3 I2PAK (SOT226) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN8R5-100ES I2PAK plastic single-ended package (I2PAK) TO-262 SOT226 4. Marking Table 4. Marking codes Type number Marking code PSMN8R5-100ES PSMN8R5-100ES 5. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage T 25 C T 175 C R = 20 k - 100 V DGR j j GS V gate-source voltage -20 20 V GS I drain current V = 10 V T = 25 C Fig. 1 1 - 100 A D GS j V = 10 V T = 100 C Fig. 1 - 75 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 4 - 429 A DM p mb P total power dissipation T = 25 C Fig. 2 - 263 W tot mb T storage temperature -55 175 C stg PSMN8R5-100ES All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 11 October 2012 2 / 14