GS61004B-E01-MR Gan Systems

GS61004B 100V enhancement mode GaN transistor Datasheet Features 100V enhancement mode power transistor Bottom-side cooled configuration R = 16 m DS(on) I = 38 A DS(max) Ultra-low FOM Island Technology die Low inductance GaNPX package Package Outline Circuit Symbol Simple gate drive requirements (0 V to 6 V) Transient tolerant gate drive (-20 V / +10 V) Very high switching frequency (> 10 MHz) Fast and controllable fall and rise times Reverse current capability Zero reverse recovery loss 2 Small 4.6 x 4.4 mm PCB footprint RoHS 3 (6+4) compliant Applications Description Enterprise and networking power The GS61004B is an enhancement mode GaN-on-Silicon Uninterruptable power supplies power transistor. The properties of GaN allow for high Industrial motor drives current, high voltage breakdown, high switching frequency. Solar power GaN Systems innovates with industry leading advancements Fast battery charging such as patented Island Technology and GaNPX Class D audio amplifiers packaging. Island Technology cell layout realizes high- Smart home Wireless Power Transfer current die and high yield. GaNPX packaging enables low inductance & low thermal resistance in a small package. The GS61004B is a bottom-cooled transistor that offer very low junction-to-case thermal resistance for demanding high power applications. These features combine to provide very high efficiency power switching. Rev. 200402 2009-2020 GaN Systems Inc. 1 Submit datasheet feedback GS61004B 100V enhancement mode GaN transistor Datasheet Absolute Maximum Ratings (Tcase = 25 C except as noted) Parameter Symbol Value Unit Operating Junction Temperature T -55 to +150 C J Storage Temperature Range T -55 to +150 C S Drain-to-Source Voltage V 100 V DS Transient Drain to Source Voltage (Note 1) V 120 V DS(transient) Gate-to-Source Voltage V -10 to +7 V GS Gate-to-Source Voltage - transient (Note 1) V -20 to +10 V GS(transient) Continuous Drain Current (T =25 C) I 38 A case DS Continuous Drain Current (T =100 C) I 26 A case DS Pulse Drain Current (Pulse width 50 s, V = 6V) (Note 2) I 60 A GS DS Pulse (1) For < 1 s (2) Defined by product design and characterization. Value is not tested to full current in production. Thermal Characteristics (Typical values unless otherwise noted) Parameter Symbol Value Units Thermal Resistance (junction-to-case) bottom side R 1.2 C /W JC Thermal Resistance (junction-to-ambient) (Note 3) R 28 C /W JA Maximum Soldering Temperature (MSL3 rated) T 260 C SOLD (3) Device mounted on 1.6 mm PCB thickness FR4, 4-layer PCB with 2 oz. copper on each layer. The recommendation for thermal vias under the thermal pad are 0.3 mm diameter (12 mil) with 0.635 mm 2 pitch (25 mil). The copper layers under the thermal pad and drain pad are 25 x 25 mm each. The PCB is mounted in horizontal position without air stream cooling. Ordering Information Packing Reel Reel Ordering code Package type Qty method Diameter Width GS61004B-TR GaNPX bottom cooled Tape-and-Reel 3000 13 (330mm) 12mm GS61004B-MR GaNPX bottom cooled Mini-Reel 250 7 (180mm) 12mm Rev. 200402 2009-2020 GaN Systems Inc. 2 Submit datasheet feedback