PSMN4R5-40PS,127 Nexperia

PSMN4R5-40PS N-channel 40 V 4.6 m standard level MOSFET Rev. 02 25 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses sources 1.3 Applications DC-to-DC convertors Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 40 V DS j j I drain current T =25C V =10V - - 100 A D mb GS see Figure 1 P total power T = 25 C see Figure 2 - - 148 W tot mb dissipation Dynamic characteristics Q gate-drain charge V =10V I =25A -8.8 -nC GD GS D V = 20 V see Figure 14 DS see Figure 15 Static characteristics R drain-source V =10V I =25A 1 -3.9 4.6 m DSon GS D on-state resistance T = 25 C see Figure 13 j 1 Measured 3 mm from package.Nexperia PSMN4R5-40PS N-channel 40 V 4.6 m standard level MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate mb D 2D drain 3S source G mb D mounting base connected to drain mbb076 S 12 3 SOT78 (TO-220AB SC-46) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN4R5-40PS TO-220AB plastic single-ended package heatsink mounted 1 mounting hole 3-lead SOT78 SC-46 TO-220AB 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 40 V DS j j V drain-gate voltage T 25 C T 175 C R =20k -40 V DGR j j GS V gate-source voltage -20 20 V GS I drain current V =10V T = 100 C see Figure 1 -96 A D GS mb V =10V T =25C see Figure 1 -100 A GS mb I peak drain current t 10 s pulsed T =25C see Figure 3 -545 A DM p mb P total power dissipation T =25C see Figure 2 -148 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j Source-drain diode I source current T =25C - 100 A S mb I peak source current t 10 s pulsed T =25C - 545 A SM p mb Avalanche ruggedness E non-repetitive drain-source V =10V T =25C I =100 A V 40 V -152 mJ DS(AL)S GS j(init) D sup avalanche energy unclamped R =50 GS Nexperia B.V. 2017. All rights reserved PSMN4R5-40PS 2 Product data sheet Rev. 02 25 June 2009 2 of 13