X-On Electronics has gained recognition as a prominent supplier of PSMN4R6-60PS,127 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN4R6-60PS,127 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PSMN4R6-60PS,127 Nexperia

PSMN4R6-60PS,127 electronic component of Nexperia
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Part No.PSMN4R6-60PS,127
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET N-CH 60V STD LEVEL MOSFET
Datasheet: PSMN4R6-60PS,127 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.596 ea
Line Total: USD 2.6 
Availability - 4660
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
382
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 77
Multiples : 1
77 : USD 1.6952
100 : USD 1.5743

4660
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 2.596
10 : USD 1.903
100 : USD 1.496
500 : USD 1.375
1000 : USD 1.309

44521
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 268
Multiples : 1
268 : USD 1.82
500 : USD 1.7387
1000 : USD 1.6413

382
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 5
Multiples : 1
5 : USD 1.6978

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
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Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the PSMN4R6-60PS,127 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN4R6-60PS,127 and other electronic components in the MOSFETs category and beyond.

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PSMN4R6-60PS N-channel 60 V, 4.6 m standard level MOSFET in TO220 Rev. 3 18 April 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses sources 1.3 Applications DC-to-DC converters Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175C --60 V DS j j 1 I drain current T =25C see Figure 1 - - 100 A D mb P total power dissipation T =25C see Figure 2 --211 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V =10V I =25A T = 175 C - 8.05 10.6 m DSon GS D j resistance see Figure 12 =10V I =25A T =25C -3.5 4.6 m V GS D j see Figure 13 Dynamic characteristics Q gate-drain charge V =10V I =25A V =30V - 14.8 - nC GD GS D DS see Figure 14 see Figure 15 Q total gate charge - 70.8 - nC G(tot) Avalanche ruggedness E non-repetitive V =10V T =25C I =100 A - - 266 mJ DS(AL)S GS j(init) D drain-source V 60 V R =50 unclamped sup GS avalanche energy 1 Continuous current is limited by package.PSMN4R6-60PS Nexperia N-channel 60 V, 4.6 m standard level MOSFET in TO220 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 12 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN4R6-60PS TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB 4. Marking Table 4. Marking codes Type number Marking code PSMN4R6-60PS PSMN4R6-60PS PSMN4R6-60PS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 3 18 April 2012 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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