X-On Electronics has gained recognition as a prominent supplier of PSMN4R3-100PS,127 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN4R3-100PS,127 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PSMN4R3-100PS,127 Nexperia

PSMN4R3-100PS,127 electronic component of Nexperia
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Part No.PSMN4R3-100PS,127
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET N-Ch 100V 4.3 mo std level moSFET
Datasheet: PSMN4R3-100PS,127 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
4: USD 1.9214 ea
Line Total: USD 7.69 
Availability - 4748
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ: 4  Multiples: 1
Pack Size: 1
Availability Price Quantity
4748
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 1
Multiples : 1
1 : USD 2.1554
10 : USD 2.0085
50 : USD 2.0072
100 : USD 1.9266
250 : USD 1.9214
500 : USD 1.8564
1000 : USD 1.8395
2500 : USD 1.8239
5000 : USD 1.82

97
Ship by Thu. 05 Dec to Tue. 10 Dec
MOQ : 1
Multiples : 1
1 : USD 5.353
10 : USD 4.6704
30 : USD 4.2671
100 : USD 3.8562
500 : USD 3.6687
1000 : USD 3.5827

4102
Ship by Tue. 26 Nov to Thu. 28 Nov
MOQ : 1
Multiples : 1
1 : USD 3.223
10 : USD 2.332
50 : USD 2.189
100 : USD 2.09
5000 : USD 2.046

4748
Ship by Thu. 28 Nov to Wed. 04 Dec
MOQ : 4
Multiples : 1
4 : USD 1.9214
500 : USD 1.8564
1000 : USD 1.8395
2500 : USD 1.8239
5000 : USD 1.82

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs - Gate-Source Breakdown Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
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We are delighted to provide the PSMN4R3-100PS,127 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN4R3-100PS,127 and other electronic components in the MOSFETs category and beyond.

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PSMN4R3-100PS N-channel 100 V 4.3 m standard level MOSFET in TO-220 Rev. 1 27 October 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO-220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses sources 1.3 Applications DC-to-DC converters Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j 1 I drain current T =25C V =10V - - 120 A D mb GS see Figure 1 total power dissipation T = 25 C see Figure 2 - - 338 W P tot mb junction temperature -55 - 175 C T j Static characteristics drain-source on-state V =10V I =25 A T =100 C -6.6 7.8 m R DSon GS D j resistance see Figure 12 2 V =10V I =25 A T =25C -3.7 4.3 m GS D j see Figure 13 Dynamic characteristics Q gate-drain charge V =10V I =75 A V =50V -49 -nC GD GS D DS see Figure 14 see Figure 15 Q total gate charge - 170 - nC G(tot) Avalanche ruggedness E non-repetitive drain-source V =10V T =25C - - 537 mJ DS(AL)S GS j(init) avalanche energy I = 120 A V 100 V D sup R =50 Unclamped GS 1 Continuous current limited by packagePSMN4R3-100PS Nexperia N-channel 100 V 4.3 m standard level MOSFET in TO-220 2 Measured 3 mm from package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 12 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN4R3-100PS TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB PSMN4R3-100PS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 27 October 2011 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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