X-On Electronics has gained recognition as a prominent supplier of PSMN5R0-100ES MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN5R0-100ES MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PSMN5R0-100ES Nexperia

PSMN5R0-100ES electronic component of Nexperia
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Part No.PSMN5R0-100ES
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET, N CH, 100V, 120A, SOT226
Datasheet: PSMN5R0-100ES Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
258: USD 1.3265 ea
Line Total: USD 342.24 
Availability - 0
MOQ: 258  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 1
Multiples : 1
1 : USD 3.1603
10 : USD 2.44
100 : USD 2.0762
500 : USD 1.8427
1000 : USD 1.7489

0
Ship by Fri. 15 Nov to Thu. 21 Nov
MOQ : 258
Multiples : 1
258 : USD 1.3265

   
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Svhc
Operating Temperature Min
Operating Temperature Range
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We are delighted to provide the PSMN5R0-100ES from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN5R0-100ES and other electronic components in the MOSFETs category and beyond.

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PSMN5R0-100ES N-channel 100 V 5 m standard level MOSFET in I2PAK Rev. 3 26 September 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a I2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses sources 1.3 Applications DC-to-DC converters Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j 1 I drain current T =25C V =10V --120A D mb GS see Figure 1 total power dissipation T =25C see Figure 2 --338W P tot mb junction temperature -55 - 175 C T j Static characteristics drain-source on-state V =10V I =25A -7.7 9 m R DSon GS D resistance T = 100 C see Figure 12 j see Figure 13 2 V =10V I =25A -4.3 5 m GS D T =25C see Figure 13 j Dynamic characteristics gate-drain charge V =10V I =75A -49 -nC Q GD GS D V = 50 V see Figure 14 DS total gate charge - 170 - nC Q G(tot) see Figure 15 Avalanche ruggedness E non-repetitive V =10V T =25C --537mJ DS(AL)S GS j(init) drain-source avalanche I = 120 A V 100 V D sup energy R =50 Unclamped GS I2PAKPSMN5R0-100ES NXP Semiconductors N-channel 100 V 5 m standard level MOSFET in I2PAK 1 Continuous current limited by package. 2 Measured 3 mm from package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 1 2 3 SOT226 (I2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN5R0-100ES I2PAK plastic single-ended package (I2PAK) TO-262 SOT226 PSMN5R0-100ES All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 3 26 September 2011 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
Nexperia USA Inc.
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