X-On Electronics has gained recognition as a prominent supplier of PSMN4R6-60BS,118 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN4R6-60BS,118 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PSMN4R6-60BS,118 Nexperia

PSMN4R6-60BS,118 electronic component of Nexperia
PSMN4R6-60BS,118 Nexperia
PSMN4R6-60BS,118 MOSFETs
PSMN4R6-60BS,118  Semiconductors

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See Product Specifications
Part No. PSMN4R6-60BS,118
Manufacturer: Nexperia
Category: MOSFETs
Description: N-Channel 60 V 100A (Tc) 211W (Tc) Surface Mount D2PAK
Datasheet: PSMN4R6-60BS,118 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.255 ea
Line Total: USD 2.26 
Availability - 5246
Ship by Fri. 03 Jan to Tue. 07 Jan
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
6
Ship by Tue. 14 Jan to Fri. 17 Jan
MOQ : 1
Multiples : 1
1 : USD 2.5197
10 : USD 2.4574
30 : USD 2.4146
100 : USD 2.3718

5246
Ship by Fri. 03 Jan to Tue. 07 Jan
MOQ : 1
Multiples : 1
1 : USD 2.255
10 : USD 1.617
100 : USD 1.221
250 : USD 1.122
500 : USD 1.0868
800 : USD 0.9438

748
Ship by Fri. 03 Jan to Tue. 07 Jan
MOQ : 1
Multiples : 0
1 : USD 2.282
10 : USD 1.89
11 : USD 1.638
29 : USD 1.554
100 : USD 1.484

776
Ship by Tue. 07 Jan to Mon. 13 Jan
MOQ : 800
Multiples : 800
800 : USD 1.0647

4403
Ship by Tue. 07 Jan to Mon. 13 Jan
MOQ : 110
Multiples : 1
110 : USD 1.1773

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the PSMN4R6-60BS,118 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN4R6-60BS,118 and other electronic components in the MOSFETs category and beyond.

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PSMN4R6-60BS N-channel 60 V, 4.4 m standard level MOSFET in D2PAK Rev. 1 22 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses sources 1.3 Applications DC-to-DC converters Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 60 V DS j j 1 I drain current T =25C see Figure 1 - - 100 A D mb P total power dissipation T =25C see Figure 2 --211 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V =10V I =25A T = 100 C see -5.987 m DSon GS D j resistance Figure 12 see Figure 13 =10V I =25A T =25C - 3.74 4.4 m V GS D j see Figure 13 Dynamic characteristics Q gate-drain charge V =10V I =25A V =30V - 14.8 - nC GD GS D DS see Figure 14 see Figure 15 Q total gate charge - 70.8 - nC G(tot) Avalanche ruggedness E non-repetitive drain-source V =10V T =25C I =100 A - - 266 mJ DS(AL)S GS j(init) D avalanche energy V 60 V R =50 unclamped sup GS 1 Continuous current is limited by package.PSMN4R6-60BS Nexperia N-channel 60 V, 4.4 m standard level MOSFET in D2PAK 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 1 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 1 It is not possible to make connection to pin 2 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN4R6-60BS D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) 4. Marking Table 4. Marking codes Type number Marking code PSMN4R6-60BS PSMN4R6-60BS PSMN4R6-60BS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 22 March 2012 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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