PSMN4R4-80PS,127 Nexperia

PSMN4R4-80PS N-channel 80 V, 4.1 m standard level FET Rev. 01 18 June 2009 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low conduction losses due to low Suitable for standard level gate drive on-state resistance sources 1.3 Applications DC - DC converters Motor control Load switch Server power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit I drain current T =25C V =10V - - 100 A D mb GS see Figure 1 see Figure 3 P total power T = 25 C see Figure 2 - - 306 W tot mb dissipation Dynamic characteristics Q gate-drain charge V =10V I =80A -25 -nC GD GS D V = 40 V see Figure 14 DS see Figure 15 Static characteristics R drain-source V =10V I =15A 1 -3.3 4.1 m DSon GS D on-state resistance T = 25 C see Figure 6 j see Figure 13 1 Measured 3 mm from package.Nexperia PSMN4R4-80PS N-channel 80 V, 4.1 m standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate mb D 2D drain 3S source G mb D drain mbb076 S 12 3 SOT78 (TO-220AB SC-46) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN4R4-80PS TO-220AB plastic single-ended package heatsink mounted 1 mounting hole 3-lead SOT78 SC-46 TO-220AB Nexperia B.V. 2017. All rights reserved PSMN4R4-80PS 1 Product data sheet Rev. 01 18 June 2009 2 of 13