CMPDM7002AHC SURFACE MOUNT www.centralsemi.com N-CHANNEL ENHANCEMENT-MODE DESCRIPTION: SILICON MOSFET The CENTRAL SEMICONDUCTOR CMPDM7002AHC is a High Current version of the 2N7002A Enhancement- mode N-Channel MOSFET, designed for high speed pulsed amplifier and driver applications. MARKING CODE: 702H SOT-23 CASE FEATURES: Device is Halogen Free by design ESD Protection up to 2kV APPLICATIONS: 350mW Power Dissipation Load/Power Switches Low r : 0.22 MAX V =10V Power Supply Converter Circuits DS(ON) GS Battery Powered Portable Equipment Industry Standard SOT-23 Surface Mount Package MAXIMUM RATINGS: (T =25C) SYMBOL UNITS A Drain-Source Voltage V 60 V DS Drain-Gate Voltage V 60 V DG Gate-Source Voltage V 20 V GS Continuous Drain Current (Steady State) I 1.0 A D Maximum Pulsed Drain Current (tp=10s) I 5.0 A DM Power Dissipation P 350 mW D Operating and Storage Junction Temperature T , T -65 to +150 C J stg Thermal Resistance 357 C/W JA ELECTRICAL CHARACTERISTICS: (T =25C unless otherwise noted) A SYMBOL TEST CONDITIONS MIN TYP MAX UNITS I , I V =20V, V=0 10 A GSSF GSSR GS DS I V =60V, V=0 500 nA DSS DS GS BV V =0, I=100A 63 V DSS GS D V V =V , I=250A 1.2 2.3 V GS(th) DS GS D V V =0, I=500mA 0.9 V SD GS S r V =10V, I=500mA 0.15 0.22 DS(ON) GS D r V =5.0V, I=500mA 0.20 0.30 DS(ON) GS D Q V =10V, V =4.5V, I=1.0A 2.3 nC g(tot) DS GS D Q V =10V, V =4.5V, I=1.0A 1.0 nC gs DS GS D Q V =10V, V =4.5V, I=1.0A 0.7 nC gd DS GS D C V =25V, V =0, f=1.0MHz 25 pF rss DS GS C V =25V, V =0, f=1.0MHz 240 pF iss DS GS C V =25V, V =0, f=1.0MHz 50 pF oss DS GS t V =30V, V =4.5V, I=1.0A on DD GS D R =6.0, R=30 35 ns G L t V =30V, V =4.5V, I=1.0A off DD GS D R =6.0, R=30 50 ns G L R2 (2-August 2011)CMPDM7002AHC SURFACE MOUNT N-CHANNEL ENHANCEMENT-MODE SILICON MOSFET SOT-23 CASE - MECHANICAL OUTLINE PIN CONFIGURATION LEAD CODE: 1) Gate 2) Source 3) Drain MARKING CODE: 702H R2 (2-August 2011) www.centralsemi.com