PSMN012-80BS Nexperia

PSMN012-80BS N-channel 80 V 11 m standard level MOSFET in D2PAK Rev. 2 1 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses sources 1.3 Applications DC-to-DC converters Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 80 V DS j j I drain current T =25 C V =10V see Figure 1 --74 A D mb GS P total power dissipation T =25 C see Figure 2 - - 148 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V =10 V I =15A T =25C - 9 11 m DSon GS D j resistance Dynamic characteristics gate-drain charge V =10 V I =25A V =40V -9.4 -nC Q GD GS D DS see Figure 14 see Figure 15 Avalanche ruggedness E non-repetitive drain-source V =10 V T =25C I =74A - - 100 mJ DS(AL)S GS j(init) D avalanche energy V 80 V R =50 unclamped sup GS D2PAKPSMN012-80BS NXP Semiconductors N-channel 80 V 11 m standard level MOSFET in D2PAK 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 1 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 1 It is not possible to make connection to pin 2 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN012-80BS D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 80 V DS j j V drain-gate voltage T 25 C T 175 C R =20k -80 V DGR j j GS V gate-source voltage -20 20 V GS I drain current V =10V T =100 C see Figure 1 -52 A D GS mb V =10V T = 25 C see Figure 1 -74 A GS mb I peak drain current pulsed t 10 s T = 25 C see Figure 3 - 295 A DM p mb P total power dissipation T = 25 C see Figure 2 - 148 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j T peak soldering temperature - 260 C sld(M) Source-drain diode I source current T =25C - 74 A S mb I peak source current pulsed t 10 s T = 25 C - 295 A SM p mb Avalanche ruggedness E non-repetitive drain-source V =10V T =25 C I =74A - 100 mJ DS(AL)S GS j(init) D avalanche energy V 80 V R =50 unclamped sup GS PSMN012-80BS All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 1 March 2012 2 of 14