X-On Electronics has gained recognition as a prominent supplier of PSMN013-100YSE MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN013-100YSE MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PSMN013-100YSE Nexperia

PSMN013-100YSE electronic component of Nexperia
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Part No.PSMN013-100YSE
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET, N-CH, 100V, 58A, LFPAK56
Datasheet: PSMN013-100YSE Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 2.6373 ea
Line Total: USD 2.64 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 27 Dec to Thu. 02 Jan
MOQ : 1
Multiples : 1
1 : USD 2.6373
10 : USD 1.8901
100 : USD 1.3489
500 : USD 1.0568
1000 : USD 0.8967
5000 : USD 0.8887

   
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
Operating Temperature Range
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We are delighted to provide the PSMN013-100YSE from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN013-100YSE and other electronic components in the MOSFETs category and beyond.

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PSMN013-100YSE N-channel 100 V 13 m standard level MOSFET in LFPAK56 18 December 2012 Product data sheet 1. General description Standard level N-channel MOSFET in a LFPAK56 package qualified to 175 C. Part of NXP sNextPower Liv portfolio, the PSMN013-100YSE complements the latesthot- swa controllers - robust enough to withstand substantial inrush currents during turn on, whilst offering a low R characteristic to keep temperatures down and efficiency up in DS(on) continued use. Ideal for telecommunication systems based on a 48 V backplane / supply rail. 2. Features and benefits Enhanced forward biased safe operating area for superior linear mode operation Very low R for low conduction losses DS(on) 3. Applications Electronic fuse Hot swap Load switch Soft start 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current T = 100 C V = 10 V Fig. 1 - - 58 A D mb GS P total power dissipation T = 25 C Fig. 2 - - 238 W tot mb Static characteristics R drain-source on-state V = 10 V I = 20 A T = 25 C - 11 13 m DSon GS D j resistance Fig. 12 Dynamic characteristics Q gate-drain charge V = 10 V I = 20 A V = 50 V - 26 - nC GD GS D DS Fig. 14 Fig. 15 Q total gate charge - 75 - nC G(tot) Scan or click this QR code to view the latest information for this productNXP Semiconductors PSMN013-100YSE N-channel 100 V 13 m standard level MOSFET in LFPAK56 Symbol Parameter Conditions Min Typ Max Unit Avalanche Ruggedness E non-repetitive drain- V = 10 V T = 25 C I = 82 A - - 125 mJ DS(AL)S GS j(init) D source avalanche V 100 V R = 50 unclamped sup GS energy Fig. 3 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source G 3 S source mbb076 S 4 G gate 1 2 3 4 mb D mounting base connected to LFPAK Power- drain SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN013-100YSE LFPAK plastic single-ended surface-mounted package 4 leads SOT669 Power-SO8 7. Marking Table 4. Marking codes Type number Marking code PSMN013-100YSE 13100 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage T 25 C T 175 C R = 20 k - 100 V DGR j j GS V gate-source voltage -20 20 V GS I drain current V = 10 V T = 25 C Fig. 1 - 82 A D GS j PSMN013-100YSE All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved Product data sheet 18 December 2012 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
NEXPERIA USA INC
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