PSMN013-30MLC,115 Nexperia

PSMN013-30MLC N-channel 30 V 13.6 m logic level MOSFET in LFPAK33 using NextPower Technology 23 February 2018 Product data sheet 1. General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits Low parasitic inductance and resistance Optimised for 4.5V Gate drive utilising NextPower Superjunction technology Ultra low QG, QGD, & QOSS for high system efficiencies at low and high loads 3. Applications DC-to-DC converters Load switching Synchronous buck regulator 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T = 25 C - - 30 V DS j I drain current V = 10 V T = 25 C Fig. 2 - - 39 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 38 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V = 4.5 V I = 10 A T = 25 C - 14.65 16.9 m DSon GS D j resistance Fig. 10 V = 10 V I = 10 A T = 25 C - 11.8 13.6 m GS D j Fig. 10 Dynamic characteristics Q gate-drain charge I = 10 A V = 15 V V = 4.5 V - 1 - nC GD D DS GS Fig. 12 Fig. 13 Q total gate charge I = 10 A V = 15 V V = 10 V - 8 - nC G(tot) D DS GS Fig. 12 Fig. 13Nexperia PSMN013-30MLC N-channel 30 V 13.6 m logic level MOSFET in LFPAK33 using NextPower Technology 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source D 2 S source G 3 S source 4 G gate mbb076 S mb D mounting base connected to 1 2 3 4 drain LFPAK33 (SOT1210) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN013-30MLC LFPAK33 Plastic single ended surface mounted package (LFPAK33) 8 SOT1210 leads 7. Marking Table 4. Marking codes Type number Marking code PSMN013-30MLC M13C30 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T = 25 C - 30 V DS j V gate-source voltage -20 20 V GS P total power dissipation T = 25 C Fig. 1 - 38 W tot mb I drain current V = 10 V T = 25 C Fig. 2 - 39 A D GS mb V = 10 V T = 100 C Fig. 2 - 28 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 3 - 157 A DM p mb T storage temperature -55 175 C stg T junction temperature -55 175 C j T peak soldering - 260 C sld(M) temperature PSMN013-30MLC All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2018. All rights reserved Product data sheet 23 February 2018 2 / 14