X-On Electronics has gained recognition as a prominent supplier of PSMN013-100PS,127 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN013-100PS,127 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PSMN013-100PS,127 Nexperia

PSMN013-100PS,127 electronic component of Nexperia
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Part No.PSMN013-100PS,127
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET N-CH 100V STD LEVEL MOSFET
Datasheet: PSMN013-100PS,127 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 5000
Multiples : 1
5000 : USD 1.2285
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 1.8349
10 : USD 1.5823
100 : USD 1.272
500 : USD 1.045
1000 : USD 0.8659
2000 : USD 0.8062
5000 : USD 0.7763
10000 : USD 0.7493
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 2.363
10 : USD 1.9395
100 : USD 1.6051
500 : USD 1.4044
1000 : USD 1.2372
2500 : USD 1.1815
5000 : USD 1.1815
10000 : USD 1.1815
25000 : USD 1.1815
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 2.2554
3 : USD 2.016
10 : USD 1.6367
27 : USD 1.5473
250 : USD 1.4994
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
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Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
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Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
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Type
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Typical Turn-On Delay Time
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We are delighted to provide the PSMN013-100PS,127 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN013-100PS,127 and other electronic components in the MOSFETs category and beyond.

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PSMN013-100PS N-channel 100V 13.9m standard level MOSFET in TO220. 10 August 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching and conduction losses Improved dynamic avalanche performance Suitable for standard level gate drive 1.3 Applications DC-to-DC converters Load switching Motor control Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current T = 25 C V = 10 V Fig. 1 1 - - 68 A D mb GS P total power dissipation T = 25 C Fig. 2 - - 170 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V = 10 V I = 15 A T = 100 C - 19.4 25 m DSon GS D j resistance Fig. 12 V = 10 V I = 15 A T = 25 C 2 - 10.8 13.9 m GS D j Fig. 13 Dynamic characteristics Q gate-drain charge V = 10 V I = 25 A V = 50 V - 17 - nC GD GS D DS Fig. 15 Fig. 14Nexperia PSMN013-100PS N-channel 100V 13.9m standard level MOSFET in TO220. Symbol Parameter Conditions Min Typ Max Unit Q total gate charge V = 10 V I = 25 A V = 50 V - 59 - nC G(tot) GS D DS Fig. 14 Fig. 15 Avalanche ruggedness E non-repetitive drain- V = 10 V T = 25 C I = 68 A - - 128 mJ DS(AL)S GS j(init) D source avalanche V 100 V unclamped R = 50 sup GS energy 1 Continuous current is limited by package 2 Measured 3 mm from package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol mb D 1 G gate 2 D drain G 3 S source mbb076 S mb D mounting base connected to drain 1 2 3 TO-220AB (SOT78) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN013-100PS TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB 4. Marking Table 4. Marking codes Type number Marking code PSMN013-100PS PSMN013-100PS PSMN013-100PS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 10 August 2012 2 / 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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