X-On Electronics has gained recognition as a prominent supplier of CMF20120D MOSFETs across the USA, India, Europe, Australia, and various other global locations. CMF20120D MOSFETs are a product manufactured by Wolfspeed. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

CMF20120D Wolfspeed

CMF20120D electronic component of Wolfspeed
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See Product Specifications
Part No.CMF20120D
Manufacturer: Wolfspeed
Category: MOSFETs
Description: Transistor: N-MOSFET; SiC; unipolar; 1.2kV; 24A; 215W; TO247-3
Datasheet: CMF20120D Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 41.58
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 43.2914
5 : USD 41.1582
10 : USD 40.0494
25 : USD 38.9406
50 : USD 36.8073
100 : USD 34.2041
250 : USD 31.3959
500 : USD 29.8773
1000 : USD 26.6353
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 57.1334
N/A

Obsolete
0
MOQ : 1
Multiples : 1
1 : USD 36.6201
10 : USD 36.2325
25 : USD 35.8583
50 : USD 35.6979
100 : USD 35.1366
N/A

Obsolete
   
Manufacturer
Product Category
Technology
Mounting
Case
Polarisation
Type Of Transistor
Reverse Recovery Time
Drain-Source Voltage
Drain Current
Gate-Source Voltage
On-State Resistance
Gate Charge
Power Dissipation
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the CMF20120D from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the CMF20120D and other electronic components in the MOSFETs category and beyond.

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V 1200 V CMF20120D-Silicon Carbide Power MOSFET DS I 42 A D(MAX) TM Z-Fe T MOSFET R 80m DS(on) N-Channel Enhancement Mode Features Package High Speed Switching with Low Capacitances High Blocking Voltage with Low R DS(on) Easy to Parallel and Simple to Drive Avalanche Ruggedness Resistant to Latch-Up Halogen Free, RoHS Compliant TO-247-3 Benefits Higher System Efficiency Reduced Cooling Requirements Increased System Switching Frequency Applications Solar Inverters High Voltage DC/DC Converters Motor Drives Part Number Package Switch Mode Power Supplies UPS CMF20120D TO-247-3 Maximum Ratings (T = 25C unless otherwise specified) C Symbol Parameter Value Unit Test Conditions Note 42 Fig. 10 V 20V, T = 25C GS C I Continuous Drain Current A D 24 V 20V, T = 100C GS C Pulse width t limited by T jmax P I Pulsed Drain Current 90 A Dpulse T = 25C C I = 20A, V = 50 V, D DD Single Pulse Avalanche Energy 2.2 J Fig. 15 E AS L = 9.5 mH Repetitive Avalanche Energy 1.5 J E t limited by T AR AR jmax I = 20A, V = 50 V, L = 3 mH D DD Repetitive Avalanche Current 20 A I AR t limited by Tjmax AR V Gate Source Voltage -5/+25 V GS Power Dissipation 215 W T =25C Fig. 9 P C tot -55 to T , T Operating Junction and Storage Temperature C J stg +135 Solder Temperature 260 C 1.6mm (0.063) from case for 10s T L 1 Nm Mounting Torque M3 or 6-32 screw M d 8.8 lbf-in 1 CMF20120D Rev. DElectrical Characteristics (T = 25C unless otherwise specified) C Symbol Parameter Min. Typ. Max. Unit Test Conditions Note V(BR)DSS Drain-Source Breakdown Voltage 1200 V VGS = 0V, ID = 100A 2.65 4 VDS = VGS, ID = 1mA V 3.2 4.8 VDS = VGS, ID = 10mA Gate Threshold Voltage V Fig. 11 GS(th) 2.0 V = V , I = 1mA, T = 135C DS GS D J V 2.45 V = V , I = 10mA, T = 135C DS GS D J 1 100 V = 1200V, V = 0V DS GS I Zero Gate Voltage Drain Current A DSS 10 250 V = 1200V, V = 0V, T = 135C DS GS J I Gate-Source Leakage Current 0.25 A V = 20V, V = 0V GSS GS DS 80 100 VGS = 20V, ID = 20A R Drain-Source On-State Resistance m Fig. 3 DS(on) 95 120 V = 20V, I = 20A, T = 135C GS D J 7.9 V = 20V, I = 20A DS DS g Transconductance S Fig. 6 fs 7.4 V = 20V, I = 20A, T = 135C DS DS J Ciss Input Capacitance 1915 VGS = 0V C Output Capacitance 120 oss pF Fig. 13 VDS = 800V C Reverse Transfer Capacitance 13 rss f = 1MHz AC V = 25mV E C Stored Energy 62 J Fig. 14 oss oss V = 800V, V = 0/20V t Turn-On Delay Time 13 DD GS d(on)v I = 20A D t Fall Time 24 fv ns Fig. 17 R = 2.5, R = 40 G(ext) L td(off)v Turn-Off Delay Time 40 Timing relative to V DS trv Rise Time 38 , R Internal Gate Resistance 5 f = 1MHz V = 25mV G AC Built-in SiC Body Diode Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note = 3.5 VGS = -5V, IF 10A, TJ = 25C VSD Diode Forward Voltage V = 3.1 VGS = -2V, IF 10A, TJ = 25C trr Reverse Recovery Time 220 ns = V = -5V, I 20A, T = 25C GS F J Q Reverse Recovery Charge 142 nC V = 800V, Fig. 22 rr R di /dt= 100A/s F I Peak Reverse Recovery Current 2.3 A rrm Thermal Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note R Thermal Resistance from Junction to Case 0.44 0.51 JC R Case to Sink, w/ Thermal Compound 0.25 CS K/W Fig. 7 R JA Thermal Resistance From Junction to Ambient 40 Gate Charge Characteristics Symbol Parameter Typ. Max. Unit Test Conditions Note Qgs Gate to Source Charge 23.8 VDD = 800V, VGS = 0/20V Fig. Q Gate to Drain Charge 43.1 nC I =20A gd D 12 Per JEDEC24 pg 27 Q Gate Charge Total 90.8 g 2 CMF20120D Rev. D

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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