PN: CMPA2735075F Package Type: 780019 Figure 1. CMPA2735075F 75 W, 2.7 - 3.5 GHz, GaN MMIC, Power Amplifier Crees CMPA2735075F is a gallium nitride (GaN) High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher saturated electron drift velocity and higher thermal conductivity. GaN HEMTs also offer greater power density and wider bandwidths compared to Si and GaAs transistors. This MMIC contains a two-stage reactively matched amplifier design approach enabling very wide bandwidths to be achieved. T his MMIC enables extremely wide bandwidths to be achieved in a small footprint screw-down package. Typical Performance Over 2.7-3.5 GHz (T = 25C) C Parameter 2.7 GHz 2.9 GHz 3.1 GHz 3.3 GHz 3.5 GHz Units Small Signal Gain 27 29 29 28 27 dB 1 Saturated Output Power, P 59 76 89 90 83 W SAT 1 Power Gain P 21 23 24 24 23 dB SAT 1 PAE P 43 54 56 56 56 % SAT 1 Note : P is defined as the RF output power where the device starts to draw positive gate current in the range of 2-8 mA. SAT Features Applications 27 dB Small Signal Gain Civil and Military Pulsed Radar Ampli- 80 W Typical P fiers SAT Operation up to 28 V High Breakdown Voltage High Temperature Operation 0.5 x 0.5 Total Product Size Subject to change without notice. 1 www.cree.com/rf Rev 2.2 August 2018Absolute Maximum Ratings (not simultaneous) at 25C Parameter Symbol Rating Units Conditions Drain-source Voltage V 84 VDC 25C DSS Gate-source Voltage V -10, +2 VDC 25C GS Storage Temperature T -65, +150 C STG Operating Junction Temperature T 225 C J Maximum Forward Gate Current I 28 mA 25C G Screw Torque T 40 in-oz 1 Thermal Resistance, Junction to Case (packaged) R 0.77 C/W 300 sec, 20%, 85C JC 1 Thermal Resistance, Junction to Case (packaged) R 1.44 C/W CW, 85C JC Notes: 1 Measured for the CMPA2735075F at P = 64 W. DISS Electrical Characteristics (Frequency = 2.9 GHz to 3.5 GHz unless otherwise stated T = 25C) C Characteristics Symbol Min. Typ. Max. Units Conditions DC Characteristics Gate Threshold Voltage V -3.8 -3.0 -2.3 V V = 10 V, I = 28 mA GS(TH) DS D Gate Quiescent Voltage V -2.7 V V = 28 V, I = 700 mA, Freq = 2.9 GHz GS(Q) DC DD DQ 1 Saturated Drain Current I 19.6 27.4 A V = 6.0 V, V = 2.0 V DS DS GS Drain-Source Breakdown Voltage V 84 100 V V = -8 V, I = 28 mA BD GS D 2,3 RF Characteristics Small Signal Gain S21 29 dB V = 28 V, I = 700 mA, Freq = 2.9 GHz 1 DD DQ Small Signal Gain S21 26.5 29 dB V = 28 V, I = 700 mA, Freq = 3.1 GHz 2 DD DQ Small Signal Gain S21 26 27 dB V = 28 V, I = 700 mA, Freq = 3.5 GHz 3 DD DQ V = 28 V, I = 700 mA, P = 28 dBm, Freq = DD DQ IN Power Output P 76 W 1 OUT 2.9 GHz V = 28 V, I = 700 mA, P = 28 dBm, Freq = DD DQ IN Power Output P 66 82 W 2 OUT 3.1 GHz V = 28 V, I = 700 mA, P = 28 dBm, Freq = DD DQ IN Power Output P 66 85 W 3 OUT 3.5 GHz Power Added Efficiency PAE 54 % V = 28 V, I = 700 mA, Freq = 2.9 GHz 1 DD DQ Power Added Efficiency PAE 45 54 % V = 28 V, I = 700 mA, Freq = 3.1 GHz 2 DD DQ Power Added Efficiency PAE 45 53 % V = 28 V, I = 700 mA, Freq = 3.5 GHz 3 DD DQ Input Return Loss S11 -11 -8 dB V = 28 V, I = 700 mA, Freq = 3.1 GHz 1 DD DQ Input Return Loss S11 -16 -10 dB V = 28 V, I = 700 mA, Freq = 3.5 GHz 2 DD DQ Output Return Loss S22 -9 4 dB V = 28 V, I = 700 mA, Freq = 3.1 GHz 1 DD DQ Output Return Loss S22 -17 10 dB V = 28 V, I = 700 mA, Freq = 3.5 GHz 2 DD DQ No damage at all phase angles, Y Output Mismatch Stress VSWR 5 : 1 V = 28V, I = 700mA, P = 75W CW DD DQ OUT Notes: 1 Scaled from PCM data. 2 All data pulse tested in CMPA2735075F-AMP 3 Pulse Width = 300 S, Duty Cycle = 20%. Cree, Inc. Copyright 2010-2018 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree and the Cree logo are 4600 Silicon Drive registered trademarks of Cree, Inc. Other trademarks, product and company names are the property of their respective owners and do not imply specific Durham, North Carolina, USA 27703 USA Tel: +1.919.313.5300 product and/or vendor endorsement, sponsorship or association. Fax: +1.919.869.2733 www.cree.com/rf 2 CMPA2735075F Rev 2.2