PD - 95539A IRLZ44ZPbF IRLZ44ZSPbF IRLZ44ZLPbF Features Logic Level HEXFET Power MOSFET Advanced Process Technology D Ultra Low On-Resistance V = 55V DSS 175C Operating Temperature Fast Switching R = 13.5m Repetitive Avalanche Allowed up to Tjmax DS(on) G Lead-Free I = 51A D Description S This HEXFET Power MOSFET utilizes the latest processing techniques to achieve extremely low on-resistance per silicon area. Additional features of this design are a 175C junction operating temperature, fast switching speed and improved repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in a wide variety of 2 TO-220AB D Pak TO-262 applications. IRLZ44ZPbF IRLZ44ZSPbF IRLZ44ZLPbF Absolute Maximum Ratings Parameter Max. Units Continuous Drain Current, V 10V (Silicon Limited) I T = 25C GS 51 D C I T = 100C Continuous Drain Current, V 10V GS 36 A D C Pulsed Drain Current I 204 DM P T = 25C Power Dissipation 80 W D C Linear Derating Factor 0.53 W/C V Gate-to-Source Voltage 16 V GS Single Pulse Avalanche Energy E AS (Thermally limited) 78 mJ Single Pulse Avalanche Energy Tested Value E (Tested ) 110 AS Avalanche Current I AR See Fig.12a, 12b, 15, 16 A Repetitive Avalanche Energy E AR mJ T Operating Junction and -55 to + 175 J T Storage Temperature RangeC STG Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 10 lbf in (1.1N m) Thermal Resistance Parameter Typ. Max. Units R 1.87 C/W JC Junction-to-Case R CS Case-to-Sink, Flat Greased Surface 0.50 R JA 62 Junction-to-Ambient R 40 JA Junction-to-Ambient (PCB Mount) www.irf.com 1 Electrical Characteristics T = 25C (unless otherwise specified) J Parameter Min. Typ. Max. Units Conditions V Drain-to-Source Breakdown Voltage55 V V = 0V, I = 250A (BR)DSS GS D V / T (BR)DSS J Breakdown Voltage Temp. Coefficient 0.05 V/C Reference to 25C, I = 1mA D m R DS(on) Static Drain-to-Source On-Resistance 11 13.5 V = 10V, I = 31A GS D m 20 V = 5.0V, I = 30A GS D m 22.5 V = 4.5V, I = 15A GS D V GS(th) Gate Threshold Voltage 1.0 3.0 V V = V , I = 250A DS GS D gfs Forward Transconductance 27 V V = 25V, I = 31A DS D I Drain-to-Source Leakage Current 20 A V = 55V, V = 0V DSS DS GS 250 V = 55V, V = 0V, T = 125C DS GS J I GSS Gate-to-Source Forward Leakage 200 nA V = 16V GS Gate-to-Source Reverse Leakage -200 V = -16V GS Q Total Gate Charge 24 36 I = 31A g D Q Gate-to-Source Charge 7.5 nC V = 44V gs DS Q gd Gate-to-Drain Mille) Charge12 V = 5.0V GS t d(on) Turn-On Delay Time 14 V = 50V DD t Rise Time 160 I = 31A r D t Turn-Off Delay Time 25 ns R = 7.5 d(off) G t f Fall Time 42 V = 5.0V GS L D D Internal Drain Inductance 4.5 Between lead, nH 6mm (0.25in.) G L Internal Source Inductance 7.5 from package S S and center of die contact C iss Input Capacitance 1620 V = 0V GS C oss Output Capacitance 230 V = 25V DS C Reverse Transfer Capacitance 130 pF = 1.0MHz rss C Output Capacitance 860 V = 0V, V = 1.0V, = 1.0MHz oss GS DS C oss Output Capacitance 180 V = 0V, V = 44V, = 1.0MHz GS DS C eff. oss Effective Output Capacitance 280 V = 0V, V = 0V to 44V GS DS Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I Continuous Source Current 51 MOSFET symbol S (Body Diode) A showing the I Pulsed Source Current 204 integral reverse SM (Body Diode) p-n junction diode. V Diode Forward Voltage1.3V T = 25C, I = 31A, V = 0V SD J S GS t Reverse Recovery Time 2132ns T = 25C, I = 31A, V = 28V rr J F DD di/dt = 100A/s Q Reverse Recovery Charge 16 24 nC rr t Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD) on 2 www.irf.com