X-On Electronics has gained recognition as a prominent supplier of PSMN013-30MLC MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN013-30MLC MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PSMN013-30MLC Nexperia

PSMN013-30MLC electronic component of Nexperia
PSMN013-30MLC Nexperia
PSMN013-30MLC MOSFETs
PSMN013-30MLC  Semiconductors

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See Product Specifications
Part No. PSMN013-30MLC
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET, N-CH, 30V, 39A, LFPAK33
Datasheet: PSMN013-30MLC Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.654 ea
Line Total: USD 0.65 
Availability - 0
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
0
Ship by Fri. 11 Apr to Thu. 17 Apr
MOQ : 1
Multiples : 1
1 : USD 0.654
10 : USD 0.5219
100 : USD 0.3616
500 : USD 0.2818
1000 : USD 0.2545

   
Manufacturer
Product Category
Transistor Polarity
Brand
Continuous Drain Current Id
Drain Source Voltage Vds
On Resistance Rdson
Rdson Test Voltage Vgs
Threshold Voltage Vgs
Power Dissipation Pd
Transistor Case Style
No. Of Pins
Operating Temperature Max
Msl
Svhc
Operating Temperature Min
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We are delighted to provide the PSMN013-30MLC from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN013-30MLC and other electronic components in the MOSFETs category and beyond.

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PSMN013-30MLC N-channel 30 V 13.6 m logic level MOSFET in LFPAK33 using NextPower Technology Rev. 4 15 June 2012 Product data sheet 1. Product profile 1.1 General description Logic level enhancement mode N-channel MOSFET in LFPAK33 package. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Low parasitic inductance and Ultra low QG, QGD, & QOSS for high resistance system efficiencies at low and high loads Optimised for 4.5V Gate drive utilising NextPower Superjunction technology 1.3 Applications DC-to-DC converters Synchronous buck regulator Load switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit drain-source voltage T = 25 C - - 30 V V DS j drain current T =25C V =10V see Figure 1 --39 A I D mb GS total power dissipation T =25C see Figure 2 --38 W P tot mb junction temperature -55 - 175 C T j Static characteristics drain-source on-state V =4.5 V I =10A T =25C -14.6516.9m R DSon GS D j resistance see Figure 10 V =10V I =10A T =25C -11.813.6m GS D j see Figure 10 Dynamic characteristics Q gate-drain charge V =4.5 V I =10A V =15V -1 -nC GD GS D DS see Figure 12 see Figure 13 total gate charge V =4.5 V I =10A V =15V -3.7 -nC Q G(tot) GS D DS see Figure 12 see Figure 13 LFPAK33PSMN013-30MLC NXP Semiconductors N-channel 30 V 13.6 m logic level MOSFET in LFPAK33 using NextPower Technology 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source D 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to drain 142 3 SOT1210 (LFPAK33) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN013-30MLC LFPAK33 Plastic single ended surface mounted package (LFPAK33) SOT1210 4 leads 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T = 25 C - 30 V DS j V gate-source voltage -20 20 V GS I drain current V =10V T =25C see Figure 1 -39 A D GS mb V =10V T = 100 C see Figure 1 -28 A GS mb I peak drain current pulsed t 10 s T =25C - 157 A DM p mb see Figure 4 P total power dissipation T =25C see Figure 2 -38 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j T peak soldering temperature - 260 C sld(M) V electrostatic discharge voltage MM (JEDEC JESD22-A115) 100 - V ESD Source-drain diode I source current T =25C - 34 A S mb I peak source current pulsed t 10 s T = 25 C - 157 A SM p mb Avalanche ruggedness E non-repetitive drain-source V =10V T =25C I =39A -5.6 mJ DS(AL)S GS j(init) D avalanche energy V 30 V R =50 unclamped sup GS see Figure 3 PSMN013-30MLC All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 4 15 June 2012 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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