X-On Electronics has gained recognition as a prominent supplier of PSMN013-100ES,127 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN013-100ES,127 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PSMN013-100ES,127 Nexperia

PSMN013-100ES,127 electronic component of Nexperia
PSMN013-100ES,127 Nexperia
PSMN013-100ES,127 MOSFETs
PSMN013-100ES,127  Semiconductors

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See Product Specifications
Part No. PSMN013-100ES,127
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET Single NChannel 100V 272A 170W 30mOhms
Datasheet: PSMN013-100ES,127 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 1.9228
10 : USD 1.3643
100 : USD 1.0723
500 : USD 0.9275
1000 : USD 0.7909
2500 : USD 0.7625
5000 : USD 0.7625
10000 : USD 0.7329
25000 : USD 0.7033
N/A

Obsolete
0
MOQ : 14
Multiples : 1
14 : USD 2.4426
N/A

Obsolete
   
Manufacturer
Product Category
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Channel Mode
Continuous Drain Current
Gate-Source Voltage Max
Power Dissipation
Mounting
Drain-Source On-Res
Operating Temp Range
Package Type
Pin Count
Polarity
Type
Number Of Elements
Operating Temperature Classification
Drain-Source On-Volt
Rad Hardened
Deleted
Configuration
Transistor Type
Brand
Cnhts
Hts Code
Mxhts
Product Type
Factory Pack Quantity :
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PSMN013-100ES,127 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN013-100ES,127 and other electronic components in the MOSFETs category and beyond.

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PSMN013-100ES N-channel 100V 13.9m standard level MOSFET in I2PAK. Rev. 3 29 September 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel enhancement MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Low conduction losses due to low Suitable for high frequency on-state resistance applications due to fast switching characteristics 1.3 Applications DC-to-DC converters Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source T 25 C T 175 C - - 100 V DS j j voltage 1 I drain current T =25C V =10V --68 A D mb GS see Figure 1 P total power T = 25 C see Figure 2 --170W tot mb dissipation T junction -55 - 175 C j temperature Static characteristics R drain-source V =10V I =15A --25 m DSon GS D on-state T = 100 C see Figure 11 j resistance 2 V =10V I =15A T =25C -11 13.9m GS D j see Figure 12 see Figure 11 Dynamic characteristics Q gate-drain charge V =10V I =25A -17 -nC GD GS D V =50 V see Figure 14 DS see Figure 13PSMN013-100ES Nexperia N-channel 100V 13.9m standard level MOSFET in I2PAK. Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Q total gate charge V =10V I =25A -59 -nC G(tot) GS D V =50 V see Figure 13 DS see Figure 14 Avalanche ruggedness E non-repetitive V =10V T =25C --127mJ DS(AL)S GS j(init) drain-source I =68A V 100 V D sup avalanche energy unclamped R =50 GS 1 Continuous current is limited by package. 2 Measured 3 mm from package. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 1 2 3 SOT226 (I2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN013-100ES I2PAK plastic single-ended package (I2PAK) TO-262 SOT226 PSMN013-100ES All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 3 29 September 2011 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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