X-On Electronics has gained recognition as a prominent supplier of PSMN020-100YS,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN020-100YS,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PSMN020-100YS,115 Nexperia

PSMN020-100YS,115 electronic component of Nexperia
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Part No.PSMN020-100YS,115
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET N-CHANNEL 100V STD LEVEL MOSFET
Datasheet: PSMN020-100YS,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.199 ea
Line Total: USD 1.2 
Availability - 23789
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
23789
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.199
10 : USD 0.8228
100 : USD 0.6083
500 : USD 0.5049
1500 : USD 0.4268
24000 : USD 0.4268

40740
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.5374
24000 : USD 0.5244

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Fall Time
Gate Charge Qg
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Height
Length
Transistor Type
Type
Width
Cnhts
Hts Code
Mxhts
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Subcategory
Taric
Typical Turn-On Delay Time
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We are delighted to provide the PSMN020-100YS,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN020-100YS,115 and other electronic components in the MOSFETs category and beyond.

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PSMN020-100YS N-channel 100V 20.5m standard level MOSFET in LFPAK 26 March 2014 Product data sheet 1. General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 2. Features and benefits Advanced TrenchMOS provides low RDSon and low gate charge High efficiency gains in switching power converters Improved mechanical and thermal characteristics LFPAK provides maximum power density in a Power SO8 package 3. Applications DC-to-DC converters Lithium-ion battery protection Load switching Motor control Server power supplies 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current T = 25 C V = 10 V Fig. 2 - - 43 A D mb GS P total power dissipation T = 25 C Fig. 1 - - 106 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V = 10 V I = 15 A T = 100 C - - 37 m DSon GS D j resistance Fig. 13 V = 10 V I = 15 A T = 25 C - 15 20.5 m GS D j Fig. 14 Dynamic characteristics Q gate-drain charge V = 10 V I = 30 A V = 50 V - 11.8 16.5 nC GD GS D DS Fig. 15 Fig. 16 Q total gate charge - 41 57.4 nC G(tot)Nexperia PSMN020-100YS N-channel 100V 20.5m standard level MOSFET in LFPAK Symbol Parameter Conditions Min Typ Max Unit Avalanche ruggedness E non-repetitive drain- V = 10 V T = 25 C I = 43 A - - 103 mJ DS(AL)S GS j(init) D source avalanche V 100 V unclamped R = 50 sup GS energy Fig. 4 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source G 3 S source mbb076 S 4 G gate 1 2 3 4 mb D mounting base connected to LFPAK56 Power- drain SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN020-100YS LFPAK56 Plastic single-ended surface-mounted package (LFPAK56 SOT669 Power-SO8 Power-SO8) 4 leads 7. Marking Table 4. Marking codes Type number Marking code PSMN020-100YS 20100 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage T 175 C T 25 C R = 20 k - 100 V DGR j j GS V gate-source voltage -20 20 V GS P total power dissipation T = 25 C Fig. 1 - 106 W tot mb PSMN020-100YS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 26 March 2014 2 / 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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