X-On Electronics has gained recognition as a prominent supplier of PSMN016-100YS,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN016-100YS,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PSMN016-100YS,115 Nexperia

PSMN016-100YS,115 electronic component of Nexperia
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See Product Specifications
Part No.PSMN016-100YS,115
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET Single NChannel 100V 204A 117W 29.3mOhms
Datasheet: PSMN016-100YS,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.21 ea
Line Total: USD 1.21 
Availability - 1681
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
97
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 100
Multiples : 1
100 : USD 0.6199

4
Ship by Fri. 06 Dec to Wed. 11 Dec
MOQ : 1
Multiples : 1
1 : USD 0.9551
10 : USD 0.9284
30 : USD 0.9132
100 : USD 0.8961

1681
Ship by Wed. 27 Nov to Fri. 29 Nov
MOQ : 1
Multiples : 1
1 : USD 1.21
10 : USD 0.8745
100 : USD 0.671
500 : USD 0.5841
1500 : USD 0.5324
3000 : USD 0.5192

97
Ship by Fri. 29 Nov to Thu. 05 Dec
MOQ : 13
Multiples : 1
13 : USD 0.6199

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Gate-Source Breakdown Voltage
Power Dissipation
Rds On
Gate Charge Qg
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PSMN016-100YS,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN016-100YS,115 and other electronic components in the MOSFETs category and beyond.

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PSMN016-100YS N-channel 100 V 16.3 m standard level MOSFET in LFPAK Rev. 4 27 September 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provides low Improved mechanical and thermal RDSon and low gate charge characteristics High efficiency gains in switching LFPAK provides maximum power power converters density in a Power SO8 package 1.3 Applications DC-to-DC converters Motor control Lithium-ion battery protection Server power supplies Load switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175C --100V DS j j I drain current T =25C V =10V --51 A D mb GS see Figure 1 P total power dissipation T =25C see Figure 2 --117W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V =10 V I =15A --29.3m DSon GS D resistance T = 100 C see Figure 12 j V =10 V I =15A - 12.7 16.3 m GS D T =25C see Figure 13 jPSMN016-100YS Nexperia N-channel 100 V 16.3 m standard level MOSFET in LFPAK Table 1. Quick reference data continued Symbol Parameter Conditions Min Typ Max Unit Dynamic characteristics Q gate-drain charge V =10 V I =30A -16 -nC GD GS D V =50V see Figure 14 DS Q total gate charge - 54 - nC G(tot) see Figure 15 Avalanche ruggedness E non-repetitive drain-source V =10 V T =25C --87 mJ DS(AL)S GS j(init) avalanche energy I =51A V 100 V D sup unclamped R =50 GS 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to drain 1234 SOT669 (LFPAK Power-SO8) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN016-100YS LFPAK Power-SO8 plastic single-ended surface-mounted package 4 leads SOT669 PSMN016-100YS All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 4 27 September 2011 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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