PSMN017-30PL Nexperia

PSMN017-30PL N-channel 30 V 17 m logic level MOSFET in TO220 Rev. 2 3 April 2012 Product data sheet 1. Product profile 1.1 General description Logic level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for logic level gate drive and conduction losses sources 1.3 Applications DC-to-DC converters Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175C --30 V DS j j 1 I drain current T =25 C V = 10 V see Figure 1 --32 A D mb GS P total power dissipation T = 25 C see Figure 2 --45 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V =4.5 V I =10A T =25C - 18.7 23.4 m DSon GS D j resistance see Figure 13 =10V I =10A T =25C - 13.4 17 m V GS D j see Figure 13 Dynamic characteristics Q gate-drain charge V =4.5 V I =10A V =15V -1.94-nC GD GS D DS see Figure 14 see Figure 15 Q total gate charge V =4.5 V I =10A V =15V -5.1 -nC G(tot) GS D DS see Figure 14 see Figure 15 Avalanche ruggedness non-repetitive drain-source V =10V T =25 C I =32A --13 mJ E DS(AL)S GS j(init) D avalanche energy V 30 V R =50 unclamped sup GS 1 Continuous current is limited by package. TO-220ABPSMN017-30PL NXP Semiconductors N-channel 30 V 17 m logic level MOSFET in TO220 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 12 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN017-30PL TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 30 V DS j j V drain-gate voltage T 25 C T 175 C R =20k -30 V DGR j j GS V gate-source voltage -20 20 V GS 1 I drain current V =10V T = 100 C see Figure 1 - 26.9 A D GS mb 1 V =10V T =25C see Figure 1 -32 A GS mb I peak drain current pulsed t 10 s T =25 C see Figure 3 - 152 A DM p mb P total power dissipation T =25C see Figure 2 -45 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j Source-drain diode I source current T =25C - 32 A S mb I peak source current pulsed t 10 s T = 25 C - 152 A SM p mb Avalanche ruggedness E non-repetitive drain-source V =10V T =25C I =32A -13 mJ DS(AL)S GS j(init) D avalanche energy V 30 V R =50 unclamped sup GS 1 Continuous current is limited by package. PSMN017-30PL All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 3 April 2012 2 of 14