PSMN017-80PS Nexperia

PSMN017-80PS N-channel 80 V 17 m standard level MOSFET in TO220 Rev. 3 27 September 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses sources 1.3 Applications DC-to-DC converters Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175C --80 V DS j j I drain current T =25C V =10V --50 A D mb GS see Figure 1 total power dissipation T = 25 C see Figure 2 --103W P tot mb junction temperature -55 - 175 C T j Static characteristics drain-source on-state V =10V I =10A -15.229 m R DSon GS D resistance T = 100 C see Figure 12 j V =10V I =10A -13.717 m GS D T =25C see Figure 13 j Dynamic characteristics Q gate-drain charge V =10V I =25A -6 -nC GD GS D V =40V see Figure 14 DS Q total gate charge - 26 - nC G(tot) see Figure 15 Avalanche ruggedness E non-repetitive drain-source V =10V T =25C --55 mJ DS(AL)S GS j(init) avalanche energy I =50 A V 80 V D sup R =50 unclamped GS TO-220ABPSMN017-80PS NXP Semiconductors N-channel 80 V 17 m standard level MOSFET in TO220 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 12 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN017-80PS TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 80 V DS j j V drain-gate voltage T 25 C T 175 C R =20k -80 V DGR j j GS V gate-source voltage -20 20 V GS I drain current V =10 V T = 100 C see Figure 1 -35 A D GS mb V =10 V T =25C see Figure 1 -50 A GS mb I peak drain current pulsed t 10 s T =25C see Figure 3 - 200 A DM p mb P total power dissipation T =25C see Figure 2 - 103 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j Source-drain diode I source current T =25C - 50 A S mb I peak source current pulsed t 10 s T = 25 C - 200 A SM p mb Avalanche ruggedness E non-repetitive drain-source V =10 V T =25 C I =50A -55 mJ DS(AL)S GS j(init) D avalanche energy V 80 V R =50 unclamped sup GS PSMN017-80PS All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 3 27 September 2011 2 of 14