PSMN015-60PS Nexperia

PSMN015-60PS N-channel 60 V 14.8 m standard level MOSFET Rev. 3 23 June 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses sources 1.3 Applications DC-to-DC converters Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 60 V DS j j I drain current T =25 C V =10V --50 A D mb GS see Figure 1 total power dissipation T =25 C see Figure 2 --86 W P tot mb junction temperature -55 - 175 C T j Static characteristics drain-source on-state V =10 V I =15A --23.7m R DSon GS D resistance T =100 C see Figure 12 j V =10 V I =15A - 12.6 14.8 m GS D T = 25 C see Figure 13 j Dynamic characteristics Q gate-drain charge V =10 V I =25A -4.7 -nC GD GS D V = 30 V see Figure 14 DS Q total gate charge - 20.9 - nC G(tot) see Figure 15 Avalanche ruggedness E non-repetitive drain-source V =10 V T =25C --44 mJ DS(AL)S GS j(init) avalanche energy I =50A V 60 V D sup R =50 unclamped GS TO-220ABPSMN015-60PS NXP Semiconductors N-channel 60 V 14.8 m standard level MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 12 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN015-60PS TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB PSMN015-60PS All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 3 23 June 2011 2 of 14