PSMN016-100PS NXP

PSMN016-100PS N-channel 100V 16 m standard level MOSFET in TO-220 Rev. 3 27 September 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a TO220 packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses 1.3 Applications DC-to-DC converters Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current T =25C V =10V --57 A D j GS see Figure 1 total power T = 25 C see Figure 2 --148W P tot mb dissipation T junction temperature -55 - 175 C j Static characteristics R drain-source V =10V I =15 A T =100C --28.8m DSon GS D j on-state resistance see Figure 12 V =10V I =15 A T =25C - 1316m GS D j see Figure 13 Dynamic characteristics gate-drain charge V =10V I =30 A V =50V -15 -nC Q GD GS D DS see Figure 14 see Figure 15 total gate charge - 49 - nC Q G(tot) Avalanche ruggedness non-repetitive V =10V T =25C --101mJ E DS(AL)S GS j(init) drain-source I =60A V 100 V D sup avalanche energy unclamped R =50 GS TO-220ABPSMN016-100PS NXP Semiconductors N-channel 100V 16 m standard level MOSFET in TO-220 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G Ssource mbb076 S mb D mounting base connected to drain 12 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN016-100PS TO-220AB plastic single-ended package heatsink mounted 1 mounting hole 3-lead SOT78 TO-220AB 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage T 175 C T 25 C R =20k - 100 V DGR j j GS V gate-source voltage -20 20 V GS I drain current V =10V T =100 C see Figure 1 -40 A D GS mb V =10V T = 25 C see Figure 1 -57 A GS j I peak drain current pulsed t 10 s T = 25 C see Figure 3 - 230 A DM p mb P total power dissipation T = 25 C see Figure 2 - 148 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j T peak soldering temperature - 260 C sld(M) Source-drain diode I source current T =25C - 57 A S mb I peak source current pulsed t 10 s T = 25 C - 230 A SM p mb Avalanche ruggedness E non-repetitive drain-source V =10V T =25C I =60A - 101 mJ DS(AL)S GS j(init) D avalanche energy V 100 V unclamped R =50 sup GS PSMN016-100PS All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 3 27 September 2011 2 of 14