PSMN016-100BS Nexperia

PSMN016-100BS N-channel 100V 16 m standard level MOSFET in D2PAK Rev. 2 1 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in a D2PAK packages qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses 1.3 Applications DC-to-DC converters Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current T =25C V =10 V see Figure 1 --57 A D j GS P total power dissipation T =25C see Figure 2 - - 148 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V =10V I =15 A T = 100 C see - - 28.8 m DSon GS D j resistance Figure 12 =10V I =15A T =25C - 1316m V GS D j see Figure 13 Dynamic characteristics Q gate-drain charge V =10V I =30A V =50V -15 -nC GD GS D DS see Figure 14 see Figure 15 Q total gate charge - 49 - nC G(tot) Avalanche ruggedness E non-repetitive drain-source V =10V T =25C I =60A - - 101 mJ DS(AL)S GS j(init) D avalanche energy V 100 V unclamped R =50 sup GS D2PAKPSMN016-100BS NXP Semiconductors N-channel 100V 16 m standard level MOSFET in D2PAK 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 1 2 D drain 3S source G Ssource mbb076 S mb D mounting base connected to drain 2 13 SOT404 (D2PAK) 1 It is not possible to make connection to pin 2 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN016-100BS D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage T 175 C T 25 C R =20k - 100 V DGR j j GS V gate-source voltage -20 20 V GS I drain current V =10V T = 100 C see Figure 1 -40 A D GS mb V =10V T =25 C see Figure 1 -57 A GS j I peak drain current pulsed t 10 s T =25C - 230 A DM p mb see Figure 3 P total power dissipation T =25C see Figure 2 - 148 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j T peak soldering temperature - 260 C sld(M) Source-drain diode I source current T =25C - 57 A S mb I peak source current pulsed t 10 s T = 25 C - 230 A SM p mb Avalanche ruggedness E non-repetitive drain-source V =10V T =25C I =60A - 101 mJ DS(AL)S GS j(init) D avalanche energy V 100 V unclamped R =50 sup GS PSMN016-100BS All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 1 March 2012 2 of 14