X-On Electronics has gained recognition as a prominent supplier of PSMN040-100MSEX MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN040-100MSEX MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PSMN040-100MSEX Nexperia

PSMN040-100MSEX electronic component of Nexperia
PSMN040-100MSEX Nexperia
PSMN040-100MSEX MOSFETs
PSMN040-100MSEX  Semiconductors

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See Product Specifications
Part No. PSMN040-100MSEX
Manufacturer: Nexperia
Category: MOSFETs
Description: N-Channel 100 V 30A (Tj) 91W (Tc) Surface Mount LFPAK33
Datasheet: PSMN040-100MSEX Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 1.3281 ea
Line Total: USD 1.33 
Availability - 826
Ship by Thu. 13 Mar to Tue. 18 Mar
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
826
Ship by Thu. 13 Mar to Tue. 18 Mar
MOQ : 1
Multiples : 1
1 : USD 1.3281
10 : USD 1.0731
30 : USD 0.8095
100 : USD 0.6313
500 : USD 0.5732
1500 : USD 0.5414

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Channel Mode
Configuration
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Typical Turn-Off Delay Time
Typical Turn-On Delay Time
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PSMN040-100MSEX from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN040-100MSEX and other electronic components in the MOSFETs category and beyond.

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PSMN040-100MSE N-channel 100 V 36.6 m standard level MOSFET in LFPAK33 designed specifically for high power PoE applications 26 March 2013 Product data sheet 1. General description New standards and proprietary approaches are enabling Power-over-Ethernet (PoE) systems capable of delivering up to 90W to each powered device (PD). Such solutions place increased demands on the power sourcing equipment (PSE) in terms of soft-start, thermal management and power density requirements. 2. Features and benefits Enhanced forward biased safe operating area for superior linear mode operation Low Rdson for low conduction losses Ultra reliable LFPAK33 package for superior thermal and ruggedness performance Very low I DSS 3. Applications High power PoE applications (60W and higher) IEEE802.3at and proprietary solutions 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current T = 25 C V = 10 V Fig. 1 - - 30 A D j GS P total power dissipation T = 25 C Fig. 2 - - 91 W tot mb Static characteristics R drain-source on-state V = 10 V I = 10 A T = 25 C - 29.4 36.6 m DSon GS D j resistance Fig. 13 Dynamic characteristics Q gate-drain charge V = 10 V I = 10 A V = 50 V - 10.7 - nC GD GS D DS T = 25 C Fig. 14 Fig. 15 j Q total gate charge - 30 - nC G(tot) Avalanche Ruggedness E non-repetitive drain- V = 10 V T = 25 C I = 30 A - - 54 mJ DS(AL)S GS j(init) D source avalanche V 100 V R = 50 unclamped sup GS energy Fig. 3Nexperia PSMN040-100MSE N-channel 100 V 36.6 m standard level MOSFET in LFPAK33 designed specifically for high power PoE applications 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source D 2 S source G 3 S source mbb076 S 4 G gate mb D mounting base connected to 1 2 3 4 drain LFPAK33 (SOT1210) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN040-100MSE LFPAK33 Plastic single ended surface mounted package (LFPAK33) 4 SOT1210 leads 7. Marking Table 4. Marking codes Type number Marking code PSMN040-100MSE M40E10 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage T 25 C T 175 C R = 20 k - 100 V DGR j j GS V gate-source voltage -20 20 V GS I drain current V = 10 V T = 25 C Fig. 1 - 30 A D GS j V = 10 V T = 100 C Fig. 1 - 21 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 4 - 121 A DM p mb P total power dissipation T = 25 C Fig. 2 - 91 W tot mb T storage temperature -55 175 C stg PSMN040-100MSE All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet 26 March 2013 2 / 13

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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