PSMN050-80PS NXP

PSMN050-80PS N-channel 80 V 46 m standard level MOSFET Rev. 2 28 November 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses sources 1.3 Applications DC-to-DC converters Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175C --80 V DS j j I drain current T =25C V = 10 V see Figure 1 --22 A D mb GS P total power dissipation T = 25 C see Figure 2 --56 W tot mb Static characteristics 1 R drain-source on-state resistance V =10V I =10A T =25C - 3746m DSon GS D j Dynamic characteristics Q gate-drain charge V =10V I =25A V =40V -2.3 -nC GD GS D DS see Figure 14 see Figure 15 1 Measured 3 mm from package. TO-220ABPSMN050-80PS NXP Semiconductors N-channel 80 V 46 m standard level MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 12 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN050-80PS TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 80 V DS j j V drain-gate voltage T 25 C T 175 C R =20k -80 V DGR j j GS V gate-source voltage -20 20 V GS I drain current V =10V T =100 C see Figure 1 -16 A D GS mb V =10V T = 25 C see Figure 1 -22 A GS mb I peak drain current pulsed t 10 s T = 25 C see Figure 3 -88 A DM p mb P total power dissipation T = 25 C see Figure 2 -56 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j Source-drain diode I source current T =25C - 22 A S mb I peak source current pulsed t 10 s T =25C - 88 A SM p mb Avalanche ruggedness E non-repetitive drain-source V =10V T =25 C I =22A -18 mJ DS(AL)S GS j(init) D avalanche energy V 80 V R =50 unclamped sup GS PSMN050-80PS All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 2 28 November 2011 2 of 14