PSMN030-60YS Nexperia

PSMN030-60YS N-channel LFPAK 60 V 24.7 m standard level MOSFET Rev. 02 25 October 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provides low Improved mechanical and thermal RDSon and low gate charge characteristics High efficiency gains in switching LFPAK provides maximum power power converters density in a Power SO8 package 1.3 Applications DC-to-DC converters Motor control Lithium-ion battery protection Server power supplies Load switching 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175C --60 V DS j j I drain current T =25C V =10V --29 A D mb GS see Figure 1 P total power dissipation T = 25 C see Figure 2 --56 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V =10V I =15A --39.5m DSon GS D resistance T = 100 C see Figure 12 j V =10V I =15A - 19.1 24.7 m GS D T =25C see Figure 13 j Dynamic characteristics Q gate-drain charge V =10V I =15A -3 -nC GD GS D V =30 V see Figure 14 DS Q total gate charge - 13 - nC G(tot) see Figure 15PSMN030-60YS NXP Semiconductors N-channel LFPAK 60 V 24.7 m standard level MOSFET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4 G gate mbb076 S mb D mounting base connected to 1234 drain SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN030-60YS LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 PSMN030-60YS All information provided in this document is subject to legal disclaimers. NXP B.V. 2010. All rights reserved. Product data sheet Rev. 02 25 October 2010 2 of 15