PSMN027-100PS NXP

PSMN027-100PS N-channel 100V 26.8 m standard level MOSFET in TO220 Rev. 3 12 September 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in TO220 package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses 1.3 Applications DC-to-DC converters Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175C --100V DS j j I drain current T =25C V =10V --37 A D mb GS see Figure 1 total power dissipation T =25C see Figure 2 --103W P tot mb junction temperature -55 - 175 C T j Static characteristics drain-source on-state V =10V I =15A --48 m R DSon GS D resistance T = 100 C see Figure 12 j V =10V I =15A -21 26.8m GS D T =25C see Figure 13 j Dynamic characteristics Q gate-drain charge V =10V I =30A -9 -nC GD GS D V = 50 V see Figure 14 DS Q total gate charge - 30 - nC G(tot) see Figure 15 Avalanche ruggedness E non-repetitive drain-source V =10V T =25C --59 mJ DS(AL)S GS j(init) avalanche energy I =37A V 100 V D sup unclamped R =50 GS TO-220ABPSMN027-100PS NXP Semiconductors N-channel 100V 26.8 m standard level MOSFET in TO220 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 12 3 SOT78 (TO-220AB) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN027-100PS TO-220AB plastic single-ended package heatsink mounted 1 mounting SOT78 hole 3-lead TO-220AB 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage T 175 C T 25 C R =20k - 100 V DGR j j GS V gate-source voltage -20 20 V GS I drain current V =10V T = 100 C see Figure 1 -26 A D GS mb V =10V T =25C see Figure 1 -37 A GS mb I peak drain current pulsed t 10 s T =25C see Figure 3 - 148 A DM p mb P total power dissipation T =25C see Figure 2 - 103 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j T peak soldering temperature - 260 C sld(M) Source-drain diode I source current T =25C - 37 A S mb I peak source current pulsed t 10 s T = 25 C - 148 A SM p mb Avalanche ruggedness E non-repetitive drain-source V =10V T =25C I =37A -59 mJ DS(AL)S GS j(init) D avalanche energy V 100 V unclamped R =50 sup GS PSMN027-100PS All information provided in this document is subject to legal disclaimers. NXP B.V. 2011. All rights reserved. Product data sheet Rev. 3 12 September 2011 2 of 14