PSMN034-100BS NXP

PSMN034-100BS N-channel 100 V 34.5 m standard level MOSFET in D2PAK. Rev. 2 2 March 2012 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in D2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses 1.3 Applications DC-to-DC converters Motor control Load switching Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current T =25C V =10V see Figure 1 --32 A D mb GS P total power dissipation T =25C see Figure 2 --86 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V =10V I =15A T = 100 C --62 m DSon GS D j resistance see Figure 12 =10V I =15A T =25C - 29.3 34.5 m V GS D j see Figure 13 Dynamic characteristics Q gate-drain charge V =10V I =15A V =50V -6.9 -nC GD GS D DS see Figure 14 see Figure 15 Q total gate charge - 23.8 - nC G(tot) Avalanche ruggedness E non-repetitive V =10V T =25C I =32A --42 mJ DS(AL)S GS j(init) D drain-source V 100 V unclamped R =50 sup GS avalanche energy D2PAKPSMN034-100BS NXP Semiconductors N-channel 100 V 34.5 m standard level MOSFET in D2PAK. 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 1 2 D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 1 It is not possible to make connection to pin 2 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN034-100BS D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage T 175 C T 25 C R =20k - 100 V DGR j j GS V gate-source voltage -20 20 V GS I drain current V =10V T = 100 C see Figure 1 -22 A D GS mb V =10V T =25C see Figure 1 -32 A GS mb I peak drain current pulsed t 10 s T =25C - 127 A DM p mb see Figure 3 P total power dissipation T =25C see Figure 2 -86 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j T peak soldering temperature - 260 C sld(M) Source-drain diode I source current T =25C - 32 A S mb I peak source current pulsed t 10 s T = 25 C - 127 A SM p mb Avalanche ruggedness E non-repetitive drain-source V =10V T =25C I =32A -42 mJ DS(AL)S GS j(init) D avalanche energy V 100 V unclamped R =50 sup GS PSMN034-100BS All information provided in this document is subject to legal disclaimers. NXP B.V. 2012. All rights reserved. Product data sheet Rev. 2 2 March 2012 2 of 14