PSMN035-150B,118 NXP

PSMN035-150B N-channel TrenchMOS SiliconMAX standard level FET Rev. 04 17 November 2009 Product data sheet 1. Product profile 1.1 General description SiliconMAX standard level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology. This product is designed and qualified for use in computing, communications, consumer and industrial applications only. 1.2 Features and benefits Low conduction losses due to low Suitable for high frequency on-state resistance applications due to fast switching characteristics 1.3 Applications Switched-mode power supplies 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 150 V DS j j I drain current T = 25 C see Figure 1 --50 A D mb and 2 P total power T = 25 C see Figure 3 - - 250 W tot mb dissipation Dynamic characteristics Q gate-drain charge V =10V I =50A - 3345nC GD GS D V = 120 V T =25C DS j see Figure 13 Static characteristics R drain-source V =10V I =25A - 3035m DSon GS D on-state resistance T = 25 C see Figure 11 j and 12NXP Semiconductors PSMN035-150B N-channel TrenchMOS SiliconMAX standard level FET 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1G gate mb D 1 2D drain 3S source G mb D mounting base connected to drain mbb076 S 2 13 SOT404 (D2PAK) 1 It is not possible to make connection to pin 2. 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN035-150B D2PAK plastic single-ended surface-mounted package (D2PAK) 3 leads SOT404 (one lead cropped) 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 150 V DS j j V drain-gate voltage T 175 C T 25 C R =20k -150 V DGR j j GS V gate-source voltage -20 20 V GS I drain current T = 100 C see Figure 1 and 2 -36 A D mb T =25C see Figure 1 and 2 -50 A mb I peak drain current t 10 s pulsed T =25C see Figure 2 -200 A DM p mb P total power dissipation T =25C see Figure 3 -250 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j Source-drain diode I source current T =25C - 50 A S mb I peak source current t 10 s pulsed T =25C - 200 A SM p mb Avalanche ruggedness E non-repetitive V =10V T =25C I =47A V 50 V -460 mJ DS(AL)S GS j(init) D sup drain-source avalanche unclamped t =0.1 ms R =50 see Figure 4 p GS energy I non-repetitive V 50 V V =10V T =25C -50 A AS sup GS j(init) avalanche current R =50 unclamped see Figure 4 GS PSMN035-150B 4 NXP B.V. 2009. All rights reserved. Product data sheet Rev. 04 17 November 2009 2 of 12