PSMN040-100MSE Nexperia

PSMN040-100MSE N-channel 100 V 36.6 m standard level MOSFET in LFPAK33 designed specifically for high power PoE applications 26 March 2013 Product data sheet 1. General description New standards and proprietary approaches are enabling Power-over-Ethernet (PoE) systems capable of delivering up to 90W to each powered device (PD). Such solutions place increased demands on the power sourcing equipment (PSE) in terms of soft-start, thermal management and power density requirements. 2. Features and benefits Enhanced forward biased safe operating area for superior linear mode operation Low Rdson for low conduction losses Ultra reliable LFPAK33 package for superior thermal and ruggedness performance Very low I DSS 3. Applications High power PoE applications (60W and higher) IEEE802.3at and proprietary solutions 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current T = 25 C V = 10 V Fig. 1 - - 30 A D j GS P total power dissipation T = 25 C Fig. 2 - - 91 W tot mb Static characteristics R drain-source on-state V = 10 V I = 10 A T = 25 C - 29.4 36.6 m DSon GS D j resistance Fig. 13 Dynamic characteristics Q gate-drain charge V = 10 V I = 10 A V = 50 V - 10.7 - nC GD GS D DS T = 25 C Fig. 14 Fig. 15 j Q total gate charge - 30 - nC G(tot) Avalanche Ruggedness E non-repetitive drain- V = 10 V T = 25 C I = 30 A - - 54 mJ DS(AL)S GS j(init) D source avalanche V 100 V R = 50 unclamped sup GS energy Fig. 3 Scan or click this QR code to view the latest information for this product LFPAK33NXP Semiconductors PSMN040-100MSE N-channel 100 V 36.6 m standard level MOSFET in LFPAK33 designed specifically for high power PoE applications 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source D 2 S source G 3 S source mbb076 S 4 G gate mb D mounting base connected to 1 2 3 4 drain LFPAK33 (SOT1210) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN040-100MSE LFPAK33 Plastic single ended surface mounted package (LFPAK33) 4 SOT1210 leads 7. Marking Table 4. Marking codes Type number Marking code PSMN040-100MSE M40E10 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 100 V DS j j V drain-gate voltage T 25 C T 175 C R = 20 k - 100 V DGR j j GS V gate-source voltage -20 20 V GS I drain current V = 10 V T = 25 C Fig. 1 - 30 A D GS j V = 10 V T = 100 C Fig. 1 - 21 A GS mb I peak drain current pulsed t 10 s T = 25 C Fig. 4 - 121 A DM p mb P total power dissipation T = 25 C Fig. 2 - 91 W tot mb T storage temperature -55 175 C stg PSMN040-100MSE All information provided in this document is subject to legal disclaimers. NXP B.V. 2013. All rights reserved Product data sheet 26 March 2013 2 / 13