X-On Electronics has gained recognition as a prominent supplier of PSMN039-100YS,115 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN039-100YS,115 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PSMN039-100YS,115 Nexperia

PSMN039-100YS,115 electronic component of Nexperia
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Part No.PSMN039-100YS,115
Manufacturer: Nexperia
Category: MOSFETs
Description: MOSFET Single NChannel 100V 112A 74W 71mOhms
Datasheet: PSMN039-100YS,115 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
1: USD 0.6974 ea
Line Total: USD 0.7 
Availability - 34702
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ: 1  Multiples: 1
Pack Size: 1
Availability Price Quantity
129495
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1500
Multiples : 1500
1500 : USD 0.3185
3000 : USD 0.3185
4500 : USD 0.3185
7500 : USD 0.3185
15000 : USD 0.3185

83
Ship by Mon. 09 Dec to Thu. 12 Dec
MOQ : 1
Multiples : 1
1 : USD 0.9419
10 : USD 0.7837
30 : USD 0.7047
100 : USD 0.6274
500 : USD 0.5802
1500 : USD 0.5558

34702
Ship by Thu. 28 Nov to Mon. 02 Dec
MOQ : 1
Multiples : 1
1 : USD 0.6974
10 : USD 0.5478
100 : USD 0.4147
500 : USD 0.3399
1000 : USD 0.3157
1500 : USD 0.2893
3000 : USD 0.2893
24000 : USD 0.2838

2910
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 3000
Multiples : 3000
3000 : USD 0.3367
4500 : USD 0.3332
7500 : USD 0.3209
10500 : USD 0.3177
15000 : USD 0.3164

69840
Ship by Mon. 02 Dec to Fri. 06 Dec
MOQ : 1396
Multiples : 1
1396 : USD 0.3492

   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Vgs th - Gate-Source Threshold Voltage
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Configuration
Brand
Continuous Drain Current
Drain-Source Breakdown Voltage
Power Dissipation
Rds On
Factory Pack Quantity :
Transistor Type
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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Notes:- Show Stocked Products With Similar Attributes.

We are delighted to provide the PSMN039-100YS,115 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN039-100YS,115 and other electronic components in the MOSFETs category and beyond.

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PSMN039-100YS N-channel LFPAK 100 V 39.5 m standard level MOSFET Rev. 02 2 April 2010 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in LFPAK package qualified to 175 C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits Advanced TrenchMOS provides low Improved mechanical and thermal RDSon and low gate charge characteristics High efficiency gains in switching LFPAK provides maximum power power converters density in a Power SO8 package 1.3 Applications DC-to-DC converters Motor control Lithium-ion battery protection Server power supplies Load switching 1.4 Quick reference data Table 1. Quick reference Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 100 V DS j j I drain current T =25C V =10V - - 28.1 A D mb GS see Figure 1 P total power T = 25 C see Figure 2 --74 W tot mb dissipation T junction temperature -55 - 175 C j Avalanche ruggedness E non-repetitive V =10V T =25C --42 mJ DS(AL)S GS j(init) drain-source I = 28.1 A V 100 V D sup avalanche energy unclamped R =50 GS Dynamic characteristics Q gate-drain charge V =10V I =15A -8 -nC GD GS D V =50V DS Q total gate charge - 23 - nC G(tot) see Figure 14 and 15PSMN039-100YS Nexperia N-channel LFPAK 100 V 39.5 m standard level MOSFET Table 1. Quick reference continued Symbol Parameter Conditions Min Typ Max Unit Static characteristics R drain-source V =10V I =15A --71 m DSon GS D on-state resistance T = 100 C see Figure 12 j V =10V I =15A - 30.8 39.5 m GS D T = 25 C see Figure 13 j 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1S source mb D 2S source 3S source G 4G gate mbb076 S mb D mounting base connected to 1234 drain SOT669 (LFPAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN039-100YS LFPAK plastic single-ended surface-mounted package (LFPAK) 4 leads SOT669 PSMN039-100YS 2 All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 02 2 April 2010 2 of 15

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

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