PSMN1R2-30YLD N-channel 30 V, 1.2 m, 250 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology 21 December 2018 Product data sheet 1. General description 250 A logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperias unique SchottkyPlus technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies. 2. Features and benefits 250 A capability Ultra low Q , Q and Q for high system efficiency, especially at higher switching G GD OSS frequencies Superfast switching with soft-recovery s-factor > 1 Low spiking and ringing for low EMI designs Unique SchottkyPlus technology Schottky-like performance with < 1 A leakage at 25 C Optimised for 4.5 V gate drive Low parasitic inductance and resistance High reliability clip bonded and solder die attach Power SO8 package no glue, no wire bonds, qualified to 175 C Wave solderable exposed leads for optimal visual solder inspection 3. Applications On-board DC-to-DC solutions for server and telecommunications Secondary-side synchronous rectification in telecommunication applications Voltage regulator modules (VRM) Point-of-Load (POL) modules Power delivery for V-core, ASIC, DDR, GPU, VGA and system components Brushed and brushless motor control Power OR-ing 4. Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage 25 C T 175 C - - 30 V DS j I drain current V = 10 V T = 25 C Fig. 2 1 - - 250 A D GS mb P total power dissipation T = 25 C Fig. 1 - - 194 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V = 4.5 V I = 25 A T = 25 C - 1.2 1.6 m DSon GS D j resistance Fig. 10Nexperia PSMN1R2-30YLD N-channel 30 V, 1.2 m, 250 A logic level MOSFET in LFPAK56 using NextPowerS3 Technology Symbol Parameter Conditions Min Typ Max Unit V = 10 V I = 25 A T = 25 C - 0.96 1.24 m GS D j Fig. 10 Dynamic characteristics Q gate-drain charge I = 25 A V = 15 V V = 4.5 V - 9.1 - nC GD D DS GS Fig. 12 Fig. 13 Q total gate charge - 32 - nC G(tot) Source-drain diode S softness factor I = 25 A dI /dt = -100 A/s V = 0 V - 0.95 - S S GS V = 15 V Fig. 16 DS 1 250A continuous current has been successfully demonstrated during application test. Practically, the current will be limited by PCB, thermal design and operating temperature. 5. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 S source mb D 2 S source G 3 S source 4 G gate mbb076 S mb D mounting base connected to 1 2 3 4 drain LFPAK56 Power- SO8 (SOT669) 6. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN1R2-30YLD LFPAK56 Plastic single-ended surface-mounted package (LFPAK56 SOT669 Power-SO8 Power-SO8) 4 leads 7. Marking Table 4. Marking codes Type number Marking code PSMN1R2-30YLD 1D230L 8. Limiting values Table 5. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage 25 C T 175 C - 30 V DS j V drain-gate voltage 25 C T 175 C R = 20 k - 30 V DGR j GS V gate-source voltage -20 20 V GS P total power dissipation T = 25 C Fig. 1 - 194 W tot mb PSMN1R2-30YLD All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2018. All rights reserved Product data sheet 21 December 2018 2 / 13