X-On Electronics has gained recognition as a prominent supplier of PSMN3R3-80ES,127 MOSFETs across the USA, India, Europe, Australia, and various other global locations. PSMN3R3-80ES,127 MOSFETs are a product manufactured by Nexperia. We provide cost-effective solutions for MOSFETs, ensuring timely deliveries around the world.

PSMN3R3-80ES,127 Nexperia

PSMN3R3-80ES,127 electronic component of Nexperia
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Part No.PSMN3R3-80ES,127
Manufacturer: Nexperia
Category: MOSFETs
Description: NXP Semiconductors MOSFET N-Ch 80V 3.3 m std level MOSFET
Datasheet: PSMN3R3-80ES,127 Datasheet (PDF)
This product is classified as Large/Heavy, additional shipping charges may apply. A customer service representative may contact you after ordering to confirm exact shipping charges



Price (USD)
N/A

Obsolete
Availability Price Quantity
0
MOQ : 1
Multiples : 1
1 : USD 4.2046
10 : USD 2.8482
100 : USD 2.5426
250 : USD 2.3272
500 : USD 2.1392
1000 : USD 1.8336
2500 : USD 1.8336
5000 : USD 1.8101
10000 : USD 1.6926
N/A

Obsolete
   
Manufacturer
Product Category
RoHS - XON
Icon ROHS
Id - Continuous Drain Current
Vds - Drain-Source Breakdown Voltage
Rds On - Drain-Source Resistance
Transistor Polarity
Pd - Power Dissipation
Mounting Style
Package / Case
Packaging
Technology
Number of Channels
Vgs - Gate-Source Voltage
Qg - Gate Charge
Configuration
Transistor Type
Brand
Fall Time
Rise Time
Factory Pack Quantity :
Cnhts
Hts Code
Mxhts
Product Type
Subcategory
Taric
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We are delighted to provide the PSMN3R3-80ES,127 from our MOSFETs category, at competitive rates not only in the United States, Australia, and India, but also across Europe and beyond. A long established and extensive electronic component distribution network has enhanced our global reach and dependability, ensuring cost savings through prompt deliveries worldwide. Client satisfaction is at the heart of our business, where every component counts and every customer matters. Our technical service team is ready to assist you. From product selection to after-sales support, we strive to deliver a seamless and satisfying experience. Are you ready to experience the best in electronic component distribution? Contact X-ON Electronics today and discover why X-On are a preferred choice for the PSMN3R3-80ES,127 and other electronic components in the MOSFETs category and beyond.

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PSMN3R3-80ES N-channel 80 V, 3.3 m standard level MOSFET in I2PAK Rev. 1 31 October 2011 Product data sheet 1. Product profile 1.1 General description Standard level N-channel MOSFET in I2PAK package qualified to 175C. This product is designed and qualified for use in a wide range of industrial, communications and domestic equipment. 1.2 Features and benefits High efficiency due to low switching Suitable for standard level gate drive and conduction losses 1.3 Applications DC-to-DC converters Motor control Load switch Server power supplies 1.4 Quick reference data Table 1. Quick reference data Symbol Parameter Conditions Min Typ Max Unit V drain-source voltage T 25 C T 175 C - - 80 V DS j j 1 I drain current T =25C V =10V see Figure 1 - - 120 A D mb GS P total power dissipation T =25C see Figure 2 - - 338 W tot mb T junction temperature -55 - 175 C j Static characteristics R drain-source on-state V =10V I =25A T =100 C -4.6 5.4 m DSon GS D j resistance see Figure 12 2 =10V I =25A T =25C -2.8 3.3 m V GS D j see Figure 13 Dynamic characteristics Q gate-drain charge V =10V I =75A V =40V -27 -nC GD GS D DS see Figure 14 see Figure 15 Q total gate charge - 139 - nC G(tot) Avalanche ruggedness E non-repetitive drain-source V =10V T =25C I =120 A - - 676 mJ DS(AL)S GS j(init) D avalanche energy V 80 V R =50 unclamped sup GS 1 Continuous current is limited by package. 2 Measured 3 mm from package.PSMN3R3-80ES Nexperia N-channel 80 V, 3.3 m standard level MOSFET in I2PAK 2. Pinning information Table 2. Pinning information Pin Symbol Description Simplified outline Graphic symbol 1 G gate mb D 2 D drain 3S source G mb D drain mbb076 S 1 2 3 SOT226 (I2PAK) 3. Ordering information Table 3. Ordering information Type number Package Name Description Version PSMN3R3-80ES I2PAK plastic single-ended package (I2PAK) TO-262 SOT226 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit V drain-source voltage T 25 C T 175 C - 80 V DS j j V drain-gate voltage T 25 C T 175 C R =20k -80 V DGR j j GS V gate-source voltage -20 20 V GS 1 I drain current V =10V T = 100 C see Figure 1 - 120 A D GS mb 1 V =10V T =25 C see Figure 1 - 120 A GS mb I peak drain current pulsed t 10 s T =25C - 830 A DM p mb see Figure 3 P total power dissipation T =25 C see Figure 2 - 338 W tot mb T storage temperature -55 175 C stg T junction temperature -55 175 C j T peak soldering temperature - 260 C sld(M) Source-drain diode 1 I source current T =25C - 120 A S mb I peak source current pulsed t 10 s T = 25 C - 830 A SM p mb Avalanche ruggedness E non-repetitive drain-source V =10V T =25C I =120 A - 676 mJ DS(AL)S GS j(init) D avalanche energy V 80 V R =50 unclamped sup GS 1 Continuous current is limited by package. PSMN3R3-80ES All information provided in this document is subject to legal disclaimers. Nexperia B.V. 2017. All rights reserved Product data sheet Rev. 1 31 October 2011 2 of 14

Tariff Desc

8541.21.00 16 No - - With a dissipation rate of less than 1 W Free

DIODES, TRANSISTORS AND SIMILAR SEMICONDUCTOR DEVICES; PHOTOSENSITIVE SEMICONDUCTOR DEVICES,
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